| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Aluminum-silicon ohmic contact on “shallow” n+ p junctions
|
Finetti, M.
|
|
1980
|
23 |
3 |
p. 255-262
8 p.
|
artikel
|
| 2 |
A new approach to fabrication of GaAs JFETs
|
Ishii, Y.
|
|
1980
|
23 |
3 |
p. 269-273
5 p.
|
artikel
|
| 3 |
An experimental technique for the study of non-avalanche charge injection or trapping in MIS structures
|
Kolk, J.
|
|
1980
|
23 |
3 |
p. 229-235
7 p.
|
artikel
|
| 4 |
An investigation of the interface state density in metal-silicon nitride-silicon structures
|
Bigorgne, J.P.
|
|
1980
|
23 |
3 |
p. 243-247
5 p.
|
artikel
|
| 5 |
Charge injection from a surface depletion region—The Al2O3-silicon system
|
Kolk, J.
|
|
1980
|
23 |
3 |
p. 223-228
6 p.
|
artikel
|
| 6 |
Dynamic minority-carrier storage in TRAPATT diodes
|
Kiehl, Richard A.
|
|
1980
|
23 |
3 |
p. 217-222
6 p.
|
artikel
|
| 7 |
IC-VCE characteristics of double diffused bipolar transistors under low level injection
|
Scott, David
|
|
1980
|
23 |
3 |
p. 201-207
7 p.
|
artikel
|
| 8 |
Low field study of P + NN + or P + PN + structures in the forward direction
|
Manifacier, J.-C.
|
|
1980
|
23 |
3 |
p. 197-199
3 p.
|
artikel
|
| 9 |
Microplasma effects in gallium arsenide epilayers and FETs
|
Tsironis, Christos
|
|
1980
|
23 |
3 |
p. 249-254
6 p.
|
artikel
|
| 10 |
Modelling of scaled-down MOS transistors
|
Klaassen, F.M.
|
|
1980
|
23 |
3 |
p. 237-242
6 p.
|
artikel
|
| 11 |
On the shift of threshold voltage of nonuniformly doped MOS transistors
|
Weng, Tung H.
|
|
1980
|
23 |
3 |
p. 283-284
2 p.
|
artikel
|
| 12 |
Post-breakdown bulk oscillations in gold-doped silicon p +−i−n + double-injection diodes
|
Mantha, Bhaskar
|
|
1980
|
23 |
3 |
p. 275-282
8 p.
|
artikel
|
| 13 |
The barrier height change and current transport phenomena with the presence of interfacial layer in MIS Schottky barrier solar cells
|
Lue, Juh Tzeng
|
|
1980
|
23 |
3 |
p. 263-268
6 p.
|
artikel
|
| 14 |
The effect of dopant distribution and built-in electric field on the transit time of a transistor
|
Chowdhury, N.K.D.
|
|
1980
|
23 |
3 |
p. 293-295
3 p.
|
artikel
|
| 15 |
The effect of photogenerated carriers on the mean time delay for avalanche breakdown in p-n junctions
|
McGruer, Nicol
|
|
1980
|
23 |
3 |
p. 289-291
3 p.
|
artikel
|
| 16 |
The influence of a voltage ramp on the measurement of I–V characteristics of a solar cell
|
von Roos, Oldwig
|
|
1980
|
23 |
3 |
p. 285-288
4 p.
|
artikel
|
| 17 |
The influence of surface states on a pulsed MOS capacitor recombination lifetime measurement
|
Hillen, M.W.
|
|
1980
|
23 |
3 |
p. 189-195
7 p.
|
artikel
|
| 18 |
The open-circuit voltage of back-surface-field (BSF) p-n junction solar cells in concentrated sunlight
|
Wu, Ching-Yuan
|
|
1980
|
23 |
3 |
p. 209-216
8 p.
|
artikel
|
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