| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A MESFET model for circuit analysis
|
Hartgring, Cornelis D.
|
|
1980
|
23 |
2 |
p. 121-126
6 p.
|
artikel
|
| 2 |
A study of charge trapping in the Al-Al2O3-Si, MIS system
|
Kolk, J.
|
|
1980
|
23 |
2 |
p. 101-107
7 p.
|
artikel
|
| 3 |
Comparison of different methods for numerical simulation of transient processes in bipolar semiconductor devices
|
Polsky, B.S.
|
|
1980
|
23 |
2 |
p. 183-185
3 p.
|
artikel
|
| 4 |
Effects of optical beam size on diffusion length measured by the surface photo-voltage method
|
Sopori, B.L.
|
|
1980
|
23 |
2 |
p. 139-142
4 p.
|
artikel
|
| 5 |
Harmonic generation due to hot electrons in surface inversion layers
|
Ray Choudhury, D.
|
|
1980
|
23 |
2 |
p. 127-128
2 p.
|
artikel
|
| 6 |
High-temperature carrier transport in n-type epitaxial GaAs
|
Nichols, K.H.
|
|
1980
|
23 |
2 |
p. 109-116
8 p.
|
artikel
|
| 7 |
Investigation of the temperature-dependent properties of a bipolar transistor
|
Kwok, H.L.
|
|
1980
|
23 |
2 |
p. 185-187
3 p.
|
artikel
|
| 8 |
Observation of lifetime controlling recombination centres in silicon power devices
|
Paxman, D.H.
|
|
1980
|
23 |
2 |
p. 129-132
4 p.
|
artikel
|
| 9 |
Ohmic contacts in GaAs
|
Yoder, M.N.
|
|
1980
|
23 |
2 |
p. 117-119
3 p.
|
artikel
|
| 10 |
On the role of degeneracy in the “heavy-doping” phenomenon
|
Heasell, E.L.
|
|
1980
|
23 |
2 |
p. 183-
1 p.
|
artikel
|
| 11 |
On the small-signal equivalent circuit of p-n junctions in the condition of finite carriers multiplication
|
Tjapkin, D.A.
|
|
1980
|
23 |
2 |
p. 133-138
6 p.
|
artikel
|
| 12 |
Spontaneous oscillations in gallium arsenide field effect transistors
|
Grubin, H.L.
|
|
1980
|
23 |
2 |
p. 157-172
16 p.
|
artikel
|
| 13 |
The determination of transport parameters of minority carriers in n–p junctions by means of an electron microscope. Critique of recent developments
|
von Roos, Oldwig
|
|
1980
|
23 |
2 |
p. 177-182
6 p.
|
artikel
|
| 14 |
The effect of field dependent mobility on the threshold voltage of a small geometry MOSFET
|
Akers, L.A.
|
|
1980
|
23 |
2 |
p. 173-175
3 p.
|
artikel
|
| 15 |
The p + n − n + diode pulsed at extreme current densities—I
|
Razouk, Laila R.
|
|
1980
|
23 |
2 |
p. 143-149
7 p.
|
artikel
|
| 16 |
The p + n − n + pulsed diode at extreme current densities—II
|
Neudeck, Gerold W.
|
|
1980
|
23 |
2 |
p. 151-155
5 p.
|
artikel
|
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