nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Admittance spectroscopy: A powerful characterization technique for semiconductor crystals—Application to ZnTe
|
Pautrat, J.L. |
|
1980 |
23 |
11 |
p. 1159-1169 11 p. |
artikel |
2 |
A unifying study of tandem-junction, front-surface-field, and interdigitated-back-contact solar cells
|
Fossum, J.G. |
|
1980 |
23 |
11 |
p. 1127-1138 12 p. |
artikel |
3 |
Barrier height control of Pd2 Si/Si schottky diodes using diffusion from doped Pd
|
Studer, Bruno |
|
1980 |
23 |
11 |
p. 1181-1184 4 p. |
artikel |
4 |
Determination of interface-state parameters in a MOS capacitor by DLTS
|
Tredwell, T.J. |
|
1980 |
23 |
11 |
p. 1171-1178 8 p. |
artikel |
5 |
Effect of phosphorus gettering on 1/ƒ noise in bipolar transistors
|
Stoisiek, M. |
|
1980 |
23 |
11 |
p. 1147-1149 3 p. |
artikel |
6 |
Silicon-gate CMOS devices with 300 Å gate oxides
|
Lindenberger, W.S. |
|
1980 |
23 |
11 |
p. 1179-1180 2 p. |
artikel |
7 |
Surface recombination effects in an improved theory of a p-type MIS solar cell
|
Landsberg, P.T. |
|
1980 |
23 |
11 |
p. 1139-1145 7 p. |
artikel |
8 |
The electrical characteristics of InP implanted with the column IV elements
|
Donnelly, J.P. |
|
1980 |
23 |
11 |
p. 1151-1154 4 p. |
artikel |
9 |
The impact of molybdenum on silicon and silicon solar cell performance
|
Rohatgi, A. |
|
1980 |
23 |
11 |
p. 1185-1190 6 p. |
artikel |
10 |
Theoretical and experimental characterization of the DUal-BAse transistor (DUBAT)
|
Wu, Chung-Yu |
|
1980 |
23 |
11 |
p. 1113-1121 9 p. |
artikel |
11 |
Theory of the fully depleted SOS/MOS transistor
|
Worley, Eugene R. |
|
1980 |
23 |
11 |
p. 1107-1111 5 p. |
artikel |
12 |
Transistor noise theory in the Middlebrook limit of high injection
|
Gardner, C.L. |
|
1980 |
23 |
11 |
p. 1155-1158 4 p. |
artikel |
13 |
Tunnelling current in PbTe-Pb0.8Sn0.2Te heterojunctions
|
Zemel, A. |
|
1980 |
23 |
11 |
p. 1123-1126 4 p. |
artikel |
14 |
Turn-off-type field-controlled thyristor
|
Homola, J. |
|
1980 |
23 |
11 |
p. 1101-1105 5 p. |
artikel |