| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An algorithm for treating interface surface charge in the two-dimensional discretization of Poisson's equation for the numerical analysis of semiconductor devices such as MOSFETs
|
Sutherland, A.D.
|
|
1980
|
23 |
10 |
p. 1085-1087
3 p.
|
artikel
|
| 2 |
Carrier compensation in O+ implanted n-type GaAs
|
Asano, T.
|
|
1980
|
23 |
10 |
p. 1089-1090
2 p.
|
artikel
|
| 3 |
Distributed series resistance in photovoltaic devices; intensity and loading effects
|
Smirnov, Georgy M.
|
|
1980
|
23 |
10 |
p. 1055-1058
4 p.
|
artikel
|
| 4 |
Effect of minority carrier injection on lateral current in MIS tunnel structures
|
Ruzyłło, J.
|
|
1980
|
23 |
10 |
p. 1041-1045
5 p.
|
artikel
|
| 5 |
Electrical properties of CVD Al2O3GaAs MIS capacitors
|
Tanaka, Kuniaki
|
|
1980
|
23 |
10 |
p. 1093-1094
2 p.
|
artikel
|
| 6 |
Equivalent temperature of hot electrons
|
van der Ziel, A.
|
|
1980
|
23 |
10 |
p. 1035-1036
2 p.
|
artikel
|
| 7 |
Erratum
|
|
|
1980
|
23 |
10 |
p. 1099-
1 p.
|
artikel
|
| 8 |
Examination of CCDs using voltage contrast with a scanning electron microscope
|
Rodman, J.K.
|
|
1980
|
23 |
10 |
p. 1029-1033
5 p.
|
artikel
|
| 9 |
Fabrication and characteristics of “autodoped depletion VMOSTs”
|
Bhattacharyya, A.B.
|
|
1980
|
23 |
10 |
p. 1094-1097
4 p.
|
artikel
|
| 10 |
Formation and stability of In contacts to n-type CdTe
|
Braithwaite, R.E.
|
|
1980
|
23 |
10 |
p. 1091-1092
2 p.
|
artikel
|
| 11 |
Interface charges beneath laser-annealed insulators on silicon
|
Kamins, T.I.
|
|
1980
|
23 |
10 |
p. 1037-1039
3 p.
|
artikel
|
| 12 |
Mechanism of operation of field-effect devices
|
Gupta, Ravendra K.
|
|
1980
|
23 |
10 |
p. 1011-1014
4 p.
|
artikel
|
| 13 |
Memory hysteresis measurements on silicon oxynitride films
|
Horváth, Zs.J.
|
|
1980
|
23 |
10 |
p. 1053-1054
2 p.
|
artikel
|
| 14 |
Operation model of floating-Si-gate channel-corner-avalanche-transition (FCAT) nonvolatile memory devices
|
Horiuchi, Masatada
|
|
1980
|
23 |
10 |
p. 1047-1051
5 p.
|
artikel
|
| 15 |
Properties of CdSe thin film transistors prepared by photolithography
|
Lee, M.J.
|
|
1980
|
23 |
10 |
p. 1087-1088
2 p.
|
artikel
|
| 16 |
Temperature effects in silicon solar cells
|
Agarwala, Amita
|
|
1980
|
23 |
10 |
p. 1021-1028
8 p.
|
artikel
|
| 17 |
The effect of high temperature annealing on the spatial variation of bulk lifetime near the SiSiO2 interface
|
Manchanda, L.
|
|
1980
|
23 |
10 |
p. 1015-1020
6 p.
|
artikel
|
| 18 |
Theory and application of a nondestructive photovoltaic technique for the measurement of resistivity variations in circular semiconductor slices
|
Larrabee, R.D.
|
|
1980
|
23 |
10 |
p. 1059-1068
10 p.
|
artikel
|
| 19 |
Theory of extrinsic and intrinsic heterojunctions in thermal equilibrium
|
von Ross, Oldwig
|
|
1980
|
23 |
10 |
p. 1069-1075
7 p.
|
artikel
|
| 20 |
Two-dimensional field distribution analysis of reverse biased p-n junction devices
|
Yasuda, Seiji
|
|
1980
|
23 |
10 |
p. 1077-1084
8 p.
|
artikel
|
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