| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analog behavior of forksheet FET at high temperatures
|
Martino, Joao Antonio
|
|
|
227 |
C |
p.
|
artikel
|
| 2 |
Analysis of electron mobility in 7-level stacked nanosheet GAA nMOSFETs
|
de Souza, Michelly
|
|
|
227 |
C |
p.
|
artikel
|
| 3 |
Analytical modeling of nanoscale double-gate junctionless transistors comprising the impact of the source and drain underlap regions
|
Nakos, Miltiadis K.
|
|
|
227 |
C |
p.
|
artikel
|
| 4 |
An efficient temperature dependent compact model for nanosheet FET for neuromorphic computing circuit
|
Kumari, N. Aruna
|
|
|
227 |
C |
p.
|
artikel
|
| 5 |
DFT study of adsorption density of gas molecules in 2D materials
|
Ortega, R.
|
|
|
227 |
C |
p.
|
artikel
|
| 6 |
Editorial Board
|
|
|
|
227 |
C |
p.
|
artikel
|
| 7 |
Electron mobility in silicon under high uniaxial strain
|
Roisin, Nicolas
|
|
|
227 |
C |
p.
|
artikel
|
| 8 |
Enhanced linearity of AlGaN/GaN HEMTs via dual-gate configuration for RF amplifier applications
|
Guo, Haowen
|
|
|
227 |
C |
p.
|
artikel
|
| 9 |
Evolution of threshold voltage in 1.2-kV planar SiC MOSFETs during repetitive UIS stressing
|
Lin, Chaobiao
|
|
|
227 |
C |
p.
|
artikel
|
| 10 |
Exploring TEG parameters for optimal body heat harvesting in wearable devices
|
Qureshi, Tabrez
|
|
|
227 |
C |
p.
|
artikel
|
| 11 |
Influence of multiple MISHEMT conduction channels on its analog behavior
|
Canales, Bruno G.
|
|
|
227 |
C |
p.
|
artikel
|
| 12 |
Investigating random discrete dopant-induced variability in cryogenic gate-all-around nanosheet FETs: A quantum transport simulation study
|
Lee, Jaehyun
|
|
|
227 |
C |
p.
|
artikel
|
| 13 |
Machine learning augmented TCAD assessment of corner radii in nanosheet FET
|
Patel, Jyoti
|
|
|
227 |
C |
p.
|
artikel
|
| 14 |
Maximum, effective, and average thermal resistance for GaN-based HEMTs on SiC, Si and sapphire substrates
|
Shivanand Powar, Kaushik
|
|
|
227 |
C |
p.
|
artikel
|
| 15 |
One-step variation included compact modeling with conditional variational autoencoder
|
Wang, Shuhan
|
|
|
227 |
C |
p.
|
artikel
|
| 16 |
Performance of Pulse-Programmed memristive crossbar array with bimodally distributed stochastic synaptic weights
|
Dersch, Nadine
|
|
|
227 |
C |
p.
|
artikel
|
| 17 |
Reactive sputtering deposited α-MoO3 thin films for forming-free resistive random-access memory
|
Guo, Zeqi
|
|
|
227 |
C |
p.
|
artikel
|
| 18 |
Recent progress in bipolar and heterojunction bipolar transistors on SOI
|
Panda, Soumya Ranjan
|
|
|
227 |
C |
p.
|
artikel
|
| 19 |
Stress management in freestanding membranes obtained by ion implantation induced delamination
|
Benichou, L.
|
|
|
227 |
C |
p.
|
artikel
|
| 20 |
Substrate crosstalk characterization for optimized isolation in FDSOI
|
Chohan, Talha
|
|
|
227 |
C |
p.
|
artikel
|
| 21 |
The impact of drift region length on total ionizing dose effects on LDMOSFET
|
Li, Shun
|
|
|
227 |
C |
p.
|
artikel
|
| 22 |
Thermal coupling between FD-SOI FETs at cryogenic temperatures
|
Vanbrabant, Martin
|
|
|
227 |
C |
p.
|
artikel
|
| 23 |
TLM-based numerical extraction for CMOS-compatible N+-InGaAs ohmic contacts on 200mm Si substrates
|
Lombrez, A.
|
|
|
227 |
C |
p.
|
artikel
|
Tijdschrift beschrijving