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Journal description
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11 results found
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title
author
magazine
year
volume
issue
page(s)
type
1
Analysis of the mobility behavior of MOS2 2D FETs
Cerdeira, Antonio
224
C
p.
article
2
Comprehensive analysis of MOSFET threshold voltage extraction method considering DIBL effect from 300 K down to 10 K
Ma, Zhizhao
224
C
p.
article
3
Editorial Board
224
C
p.
article
4
Editorial. Special issue. EUROSOI-ULIS 2023
Iniguez, Benjamin
224
C
p.
article
5
Editorial: Special Issue – EUROSOI-ULIS 2023 (Full-Length)
224
C
p.
article
6
Enhanced threshold voltage tuning in FD-SOI MOSFET with ferroelectric buried oxide
Cristoloveanu, Sorin
224
C
p.
article
7
Equivalence of proton-induced displacement damage in InP-based HEMT
Liu, Bo
224
C
p.
article
8
GatedNN: An accurate deep learning-based parameter extraction for BSIM-CMG
Guo, Guangxin
224
C
p.
article
9
Simulation and experimental Demonstration on A retrograde drift LDMOS
Yu, Shaoxin
224
C
p.
article
10
Study on electrical performance of AlGaN/GaN high electron mobility transistor based on cap layer design
Zhang, Tieying
224
C
p.
article
11
Suppression of de-trapping by remanent polarization in dual-mechanism flash memory
Shin, Eui Joong
224
C
p.
article
11 results found
Koninklijke Bibliotheek -
National Library of the Netherlands