| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analogies for Dirac fermions physics in graphene
|
Dragoman, Daniela
|
|
|
211 |
C |
p.
|
artikel
|
| 2 |
An enzymatic glucose biosensor using the BESOI MOSFET
|
Yojo, L.S.
|
|
|
211 |
C |
p.
|
artikel
|
| 3 |
Editorial Board
|
|
|
|
211 |
C |
p.
|
artikel
|
| 4 |
Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation
|
de Andrade, Maria Glória Caño
|
|
|
211 |
C |
p.
|
artikel
|
| 5 |
Evidence of trapping and electrothermal effects in vertical junctionless nanowire transistors
|
Wang, Y.
|
|
|
211 |
C |
p.
|
artikel
|
| 6 |
Investigation and Modeling of Multifrequency CV characteristics for 10-nm Bulk FinFETs at Cryogenic Temperatures
|
Gupta, Sumreti
|
|
|
211 |
C |
p.
|
artikel
|
| 7 |
Low contact resistance of NiGeSn on n-GeSn
|
Sun, Jingxuan
|
|
|
211 |
C |
p.
|
artikel
|
| 8 |
Modeling the impact of incomplete conformality during atomic layer processing
|
Reiter, Tobias
|
|
|
211 |
C |
p.
|
artikel
|
| 9 |
Novel crossbar array of silicon nitride resistive memories on SOI enables memristor rationed logic
|
Vasileiadis, N.
|
|
|
211 |
C |
p.
|
artikel
|
| 10 |
Statistical modeling of degradation behavior in Split-Gate Non-Volatile memory devices
|
Mei, S.
|
|
|
211 |
C |
p.
|
artikel
|
| 11 |
TCAD simulation methodology of total ionizing dose effects for PDSOI transistor with a hump characteristic
|
Lomonaco, J.
|
|
|
211 |
C |
p.
|
artikel
|
| 12 |
Technology and design study of 3D physics-based inductor on FDSOI in GHz-range
|
Sabatier, Franck
|
|
|
211 |
C |
p.
|
artikel
|
| 13 |
1540 V 21.8mΩ·cm2 4H-SiC lateral MOSFETs with DOUBLE RESURFs for power integration applications
|
Liu, Li
|
|
|
211 |
C |
p.
|
artikel
|
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