| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A discrete element small-signal equivalent circuit for forward-biased p + n diodes containing deep levels
|
Strong, P.J.
|
|
1978
|
21 |
6 |
p. 871-876
6 p.
|
artikel
|
| 2 |
An analytical model for the low- emitter-impurity-concentration transistor
|
Grung, Bernard L.
|
|
1978
|
21 |
6 |
p. 821-832
12 p.
|
artikel
|
| 3 |
An experimental determination of the forward-biased emitter-base capacitance
|
Bouma, B.C.
|
|
1978
|
21 |
6 |
p. 833-836
4 p.
|
artikel
|
| 4 |
An improved lock-layer transistor
|
Sechen, Carl
|
|
1978
|
21 |
6 |
p. 911-912
2 p.
|
artikel
|
| 5 |
A note on the “total loss” method for transfer inefficiency evaluation
|
Hosack, H.H.
|
|
1978
|
21 |
6 |
p. 912-913
2 p.
|
artikel
|
| 6 |
Avalanche induced dispersion in IMPATT diodes
|
Nishizawa, J.
|
|
1978
|
21 |
6 |
p. 847-858
12 p.
|
artikel
|
| 7 |
Breakdown walkout in planar p-n junctions
|
Saraswat, Krishna C.
|
|
1978
|
21 |
6 |
p. 813-819
7 p.
|
artikel
|
| 8 |
Carrier fluctuation noise in a MOSFET channel due to traps in the oxide
|
Jindal, R.P.
|
|
1978
|
21 |
6 |
p. 901-903
3 p.
|
artikel
|
| 9 |
C-V characteristics of metal-titanium dioxide-silicon capacitors
|
Brown, W.D.
|
|
1978
|
21 |
6 |
p. 837-846
10 p.
|
artikel
|
| 10 |
Dependence of Zn diffusion on the Al content in Ga1−x Al xAs
|
Lee, C.P.
|
|
1978
|
21 |
6 |
p. 905-907
3 p.
|
artikel
|
| 11 |
GaAs enhancement/depletion n-channel MOSFET
|
Kohn, E.
|
|
1978
|
21 |
6 |
p. 877-886
10 p.
|
artikel
|
| 12 |
Ion implantation damage in GaAs: A TEM study of the variation with ion species and stoichiometry
|
Elliott, Charles R.
|
|
1978
|
21 |
6 |
p. 859-863
5 p.
|
artikel
|
| 13 |
Lifetime control by palladium diffusion in silicon
|
So, Lingkon
|
|
1978
|
21 |
6 |
p. 887-890
4 p.
|
artikel
|
| 14 |
Measurement of carrier lifetime in the base of bipolar transistors by means of transient secondary photocurrents
|
Bielle-Daspet, Danielle
|
|
1978
|
21 |
6 |
p. 909-911
3 p.
|
artikel
|
| 15 |
Measurement of charge-carrier behaviour in PIN diodes using a laser technique
|
Cooper, R.W.
|
|
1978
|
21 |
6 |
p. 865-869
5 p.
|
artikel
|
| 16 |
Measurement of mobility profiles in GaAs at room temperature by the Corbino effect
|
Poth, H.
|
|
1978
|
21 |
6 |
p. 801-805
5 p.
|
artikel
|
| 17 |
Saturation radiation effects in MOS devices
|
Holmstrom, F.E.
|
|
1978
|
21 |
6 |
p. 915-917
3 p.
|
artikel
|
| 18 |
Small signal equivalent circuit model for the metal-insulator-semiconductor tunnel diode
|
Temple, V.A.K.
|
|
1978
|
21 |
6 |
p. 807-812
6 p.
|
artikel
|
| 19 |
The temperature stability of punch-through diodes
|
de Cogan, D.
|
|
1978
|
21 |
6 |
p. 897-900
4 p.
|
artikel
|
| 20 |
Ti-TiO2 gated MOS diode light sensor
|
Chang, C.Y.
|
|
1978
|
21 |
6 |
p. 891-896
6 p.
|
artikel
|
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