| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An integral equation method to calculate the transient behaviour of a photovoltaic solar cell
|
De Mey, G.
|
|
1978
|
21 |
3 |
p. 595-596
2 p.
|
artikel
|
| 2 |
Bulk lifetime determination of MOS structures by a voltage step response method
|
Trullemans, C.
|
|
1978
|
21 |
3 |
p. 561-564
4 p.
|
artikel
|
| 3 |
C–V index of hyperabrupt p-n junctions
|
Gupta, A.K.
|
|
1978
|
21 |
3 |
p. 507-511
5 p.
|
artikel
|
| 4 |
D.C. and high-frequency characteristics of built-in channel MOS-FETs
|
Schmidt, Pierre E.
|
|
1978
|
21 |
3 |
p. 495-505
11 p.
|
artikel
|
| 5 |
Design and performance of micron-size devices
|
Klaassen, F.M.
|
|
1978
|
21 |
3 |
p. 565-571
7 p.
|
artikel
|
| 6 |
Determination of generation lifetime from non-equilibrium linear-sweep current and capacitance measurements on an MOS capacitor
|
Kuper, P.
|
|
1978
|
21 |
3 |
p. 549-553
5 p.
|
artikel
|
| 7 |
Effect of high-temperature H2-anneals on the slow-trapping instability of MOS structures
|
Sinha, A.K.
|
|
1978
|
21 |
3 |
p. 531-535
5 p.
|
artikel
|
| 8 |
Electrical characteristics of palladium silicide
|
Wittmer, M.
|
|
1978
|
21 |
3 |
p. 573-580
8 p.
|
artikel
|
| 9 |
Electron tunnelling in semiconductor heterostructures
|
Mukherji, D.
|
|
1978
|
21 |
3 |
p. 555-559
5 p.
|
artikel
|
| 10 |
Evaluation of arsenic implanted layers by means of MOS memory characteristics
|
Wada, Y.
|
|
1978
|
21 |
3 |
p. 513-518
6 p.
|
artikel
|
| 11 |
High-frequency thermal noise in MOSFETs
|
Baril, W.A.
|
|
1978
|
21 |
3 |
p. 589-592
4 p.
|
artikel
|
| 12 |
Junction potentials of strongly illuminated n + - p - p + solar cells
|
Sabnis, Anant G.
|
|
1978
|
21 |
3 |
p. 581-587
7 p.
|
artikel
|
| 13 |
Modified charge-control model for MOS transistors
|
Kumar, Umesh
|
|
1978
|
21 |
3 |
p. 593-594
2 p.
|
artikel
|
| 14 |
On the fill factor of solar cells
|
Pulfrey, D.L.
|
|
1978
|
21 |
3 |
p. 519-520
2 p.
|
artikel
|
| 15 |
On the gate-to-drain current ratio in junction FETs at low temperature
|
Rucker, L.M.
|
|
1978
|
21 |
3 |
p. 596-597
2 p.
|
artikel
|
| 16 |
Operation and characterization of N-channel EPROM cells
|
Barnes, John J.
|
|
1978
|
21 |
3 |
p. 521-529
9 p.
|
artikel
|
| 17 |
Oscillations in JFETs exhibiting current multiplication in the channel
|
van der Ziel, A.
|
|
1978
|
21 |
3 |
p. 597-598
2 p.
|
artikel
|
| 18 |
The behaviour of boron molecular ion implants into silicon
|
Beanland, David G.
|
|
1978
|
21 |
3 |
p. 537-547
11 p.
|
artikel
|
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