| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of the fill factor for n-CdS/p-CdTe solar cells
|
Mitchell, Kim W.
|
|
1977
|
20 |
7 |
p. 559-561
3 p.
|
artikel
|
| 2 |
Anomalous current distributions in power transistors
|
Bosch, G.
|
|
1977
|
20 |
7 |
p. 635-640
6 p.
|
artikel
|
| 3 |
A simplified high-frequency MOS capacitance formula
|
Brews, J.R.
|
|
1977
|
20 |
7 |
p. 607-608
2 p.
|
artikel
|
| 4 |
Detection of deep-level (0.63 eV) radiative defects during degradation in GaAs0.6P0.4 light-emitting diodes
|
Metz, S.
|
|
1977
|
20 |
7 |
p. 603-606
4 p.
|
artikel
|
| 5 |
Diffusivity at high injection in epitaxial power transistors
|
Conti, M.
|
|
1977
|
20 |
7 |
p. 563-566
4 p.
|
artikel
|
| 6 |
Editorial announcement
|
|
|
1977
|
20 |
7 |
p. I-
1 p.
|
artikel
|
| 7 |
Electrically reprogrammable ROM using N-channel memory transistors with floating gate
|
Wada, Toshio
|
|
1977
|
20 |
7 |
p. 623-627
5 p.
|
artikel
|
| 8 |
Electrical properties of uncontaminated PbTe films on mica substrates prepared by molecular beam deposition
|
Parker, E.H.C.
|
|
1977
|
20 |
7 |
p. 567-577
11 p.
|
artikel
|
| 9 |
Gallium aluminium arsenide heterostructure lasers: Factors affecting catastrophic degradation
|
Henshall, G.D.
|
|
1977
|
20 |
7 |
p. 595-602
8 p.
|
artikel
|
| 10 |
Impedance and noise in the channel of a GaAs Schottky-gate field-effect transistor
|
Sodini, D.
|
|
1977
|
20 |
7 |
p. 579-581
3 p.
|
artikel
|
| 11 |
Liquid phase epitaxial growth of GaAs from AuGeNi melts
|
Otsubo, M.
|
|
1977
|
20 |
7 |
p. 617-621
5 p.
|
artikel
|
| 12 |
Sheet resistance component of series resistance in a solar cell as a function of grid geometry
|
Convers Wyeth, N.
|
|
1977
|
20 |
7 |
p. 629-634
6 p.
|
artikel
|
| 13 |
The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon
|
Li, Sheng S.
|
|
1977
|
20 |
7 |
p. 609-616
8 p.
|
artikel
|
| 14 |
The effect of base resistance of the vertical npn transistor in I2L structures
|
Kirschner, N.
|
|
1977
|
20 |
7 |
p. 641-646
6 p.
|
artikel
|
| 15 |
The theory of transient photoconductive processes in II–VI compounds with three deep trapping levels
|
Nussbaum, Allen
|
|
1977
|
20 |
7 |
p. 583-593
11 p.
|
artikel
|
| 16 |
Transition region behavior in abrupt, forward-biased pn-junctions
|
Guckel, H.
|
|
1977
|
20 |
7 |
p. 647-652
6 p.
|
artikel
|
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