| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Arsenic-doped polycrystalline silicon film for bipolar integrated circuits
|
Parekh, Pravin C.
|
|
1977
|
20 |
11 |
p. 883-889
7 p.
|
artikel
|
| 2 |
Behavior of the illuminated characteristic of diffused junction solar cells at high short circuit current density
|
Therez, F.
|
|
1977
|
20 |
11 |
p. 941-942
2 p.
|
artikel
|
| 3 |
Characterisation of properties of nickel in silicon using thermally stimulated capacitance method
|
Chiavarotti, G.P.
|
|
1977
|
20 |
11 |
p. 907-909
3 p.
|
artikel
|
| 4 |
Doping dependence of the properties of GaAsAlxGa1-xAs single heterostructure luminescent diodes
|
Heinen, Jochen
|
|
1977
|
20 |
11 |
p. 923-924
2 p.
|
artikel
|
| 5 |
Evolution of surface-states density of Si/wet thermal SiO2 interface during bias-temperature treatment
|
Saminadayar, K.
|
|
1977
|
20 |
11 |
p. 891-896
6 p.
|
artikel
|
| 6 |
G-R noise and microscopic defects in irradiated junction field effect transistors
|
Krishnan, I.N.
|
|
1977
|
20 |
11 |
p. 897-906
10 p.
|
artikel
|
| 7 |
Influence of interface charge inhomogeneities on the measurement of surface state densities in SiSiO2 interfaces by means of the MOS a.c. conductance technique
|
Muls, Paul A.
|
|
1977
|
20 |
11 |
p. 910-922
13 p.
|
artikel
|
| 8 |
Low frequency noise measurements on silicon-on-sapphire (SOS) MOS transistors
|
Gentil, P.
|
|
1977
|
20 |
11 |
p. 935-940
6 p.
|
artikel
|
| 9 |
Ohmic contacts to low-resistivity ZnS: Preparation, noise properties and nature of contact resistance
|
Lukyanchikova, N.B.
|
|
1977
|
20 |
11 |
p. 879-882
4 p.
|
artikel
|
| 10 |
Resistivity of phosphorus-doped sputter-deposited polycrystalline silicon films
|
Gabilli, Edgardo
|
|
1977
|
20 |
11 |
p. 925-930
6 p.
|
artikel
|
| 11 |
The quantum correction of the Einstein relation for high frequencies
|
van Vliet, K.M.
|
|
1977
|
20 |
11 |
p. 931-933
3 p.
|
artikel
|
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