| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Acousto-electric absorption in nondegenerate semiconductors
|
Sharma, S.S.
|
|
1976
|
19 |
5 |
p. 403-405
3 p.
|
artikel
|
| 2 |
A study of Pd2Si films on silicon using Auger electron spectroscopy
|
Fertig, D.J.
|
|
1976
|
19 |
5 |
p. 407-413
7 p.
|
artikel
|
| 3 |
Base resistance measurements on bipolar junction transistors via low temperature bridge techniques
|
Wade, T.E.
|
|
1976
|
19 |
5 |
p. 385-388
4 p.
|
artikel
|
| 4 |
Calculations and effects of inhomgeneity in compensated photoconductors
|
Rabie, Sameh A.
|
|
1976
|
19 |
5 |
p. 357-364
8 p.
|
artikel
|
| 5 |
Double-diffused IMPATT diodes without substrate for X-band frequencies
|
Freyer, Jürgen
|
|
1976
|
19 |
5 |
p. 419-420
2 p.
|
artikel
|
| 6 |
Edge injection currents and their effects on 1/f noise in planar Schottky diodes
|
Wall, Ernst L.
|
|
1976
|
19 |
5 |
p. 389-396
8 p.
|
artikel
|
| 7 |
Impurity bands in moderately doped semiconductors and their effect on the MOS C-V freeze-out characteristics
|
Barber, H.D.
|
|
1976
|
19 |
5 |
p. 365-368
4 p.
|
artikel
|
| 8 |
Noise in bipolar junction transistors at high injection levels
|
Wade, T.E.
|
|
1976
|
19 |
5 |
p. 381-383
3 p.
|
artikel
|
| 9 |
Photocurrent in field-induced junctions
|
Tong, K.Y.
|
|
1976
|
19 |
5 |
p. 422-424
3 p.
|
artikel
|
| 10 |
Physics and technology of data storage
|
Weiss, H.
|
|
1976
|
19 |
5 |
p. 347-356
10 p.
|
artikel
|
| 11 |
The capacitance of large barrier Schottky diodes
|
Green, Martin A.
|
|
1976
|
19 |
5 |
p. 421-422
2 p.
|
artikel
|
| 12 |
The determination of the energy distribution of interface traps in metal-nitride-oxide-silicon (memory) devices using non-steady-state techniques
|
Uranwala, J.S.
|
|
1976
|
19 |
5 |
p. 375-380
6 p.
|
artikel
|
| 13 |
Theoretical model for calculation of breakdown voltage of implanted p-n junctions
|
Keresztes, P.
|
|
1976
|
19 |
5 |
p. 415-418
4 p.
|
artikel
|
| 14 |
The resistance of an infinite slab with a disc electrode as a mixed boundary value problem
|
Leong, M.S.
|
|
1976
|
19 |
5 |
p. 397-401
5 p.
|
artikel
|
| 15 |
Transient isothermal generation at the silicon-silicon oxide interface and the direct determination of interface trap distribution
|
Simmons, J.G.
|
|
1976
|
19 |
5 |
p. 369-374
6 p.
|
artikel
|
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