nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Analytical computation of the transient diffusion response of a PN junction to a triangular spike of ionizing radiation
|
Pinel, J. |
|
1976 |
19 |
3 |
p. 265-267 3 p. |
artikel |
2 |
A self-limiting anodic etch-to-voltage (AETV) technique for fabrication of modified read-impatts
|
Niehaus, W.C. |
|
1976 |
19 |
3 |
p. 175-180 6 p. |
artikel |
3 |
A wide-band quadrature phasing system using charge transfer devices
|
Chowaniec, A. |
|
1976 |
19 |
3 |
p. 201-207 7 p. |
artikel |
4 |
Carrier temperature effects and energy transfers in non-radiative recombination
|
Parrott, J.E. |
|
1976 |
19 |
3 |
p. 229-233 5 p. |
artikel |
5 |
Discharge of MNOS structures at elevated temperatures
|
Lundkvist, Leif |
|
1976 |
19 |
3 |
p. 221-227 7 p. |
artikel |
6 |
Distributed semiconductor R-C network analysis for various electrode configurations
|
Lehovec, K. |
|
1976 |
19 |
3 |
p. 249-254 6 p. |
artikel |
7 |
Exact capacitance of a lossless MOS capacitor
|
McNutt, M.J. |
|
1976 |
19 |
3 |
p. 255-257 3 p. |
artikel |
8 |
Fabrication and characteristics of MOS-FET's incorporating anodic aluminum oxide in the gate structure
|
Raymond, Ronald K. |
|
1976 |
19 |
3 |
p. 181-184 4 p. |
artikel |
9 |
High-field transport in NiO and Ni1−x Li xO thin films
|
Fuschillo, Nicholas |
|
1976 |
19 |
3 |
p. 209-219 11 p. |
artikel |
10 |
Theoretical analysis of graded-band-gap gallium-aluminum arsenide/gallium arsenide p-Ga 1 t ̄ x Al x As/p-GaAs/n-GaAs solar cells
|
Konagai, M. |
|
1976 |
19 |
3 |
p. 259-264 6 p. |
artikel |
11 |
Theoretical and experimental study of MOS transistors nonuniformly doped by SILOX technique
|
Doucet, G. |
|
1976 |
19 |
3 |
p. 191-199 9 p. |
artikel |
12 |
The use of charge pumping currents to measure surface state densities in MOS transistors
|
Elliot, Alexander B.M. |
|
1976 |
19 |
3 |
p. 241-247 7 p. |
artikel |
13 |
Time-dependent MOS breakdown
|
Li, Seung P. |
|
1976 |
19 |
3 |
p. 235-239 5 p. |
artikel |