| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Analytical computation of the transient diffusion response of a PN junction to a triangular spike of ionizing radiation
|
Pinel, J.
|
|
1976
|
19 |
3 |
p. 265-267
3 p.
|
article
|
| 2 |
A self-limiting anodic etch-to-voltage (AETV) technique for fabrication of modified read-impatts
|
Niehaus, W.C.
|
|
1976
|
19 |
3 |
p. 175-180
6 p.
|
article
|
| 3 |
A wide-band quadrature phasing system using charge transfer devices
|
Chowaniec, A.
|
|
1976
|
19 |
3 |
p. 201-207
7 p.
|
article
|
| 4 |
Carrier temperature effects and energy transfers in non-radiative recombination
|
Parrott, J.E.
|
|
1976
|
19 |
3 |
p. 229-233
5 p.
|
article
|
| 5 |
Discharge of MNOS structures at elevated temperatures
|
Lundkvist, Leif
|
|
1976
|
19 |
3 |
p. 221-227
7 p.
|
article
|
| 6 |
Distributed semiconductor R-C network analysis for various electrode configurations
|
Lehovec, K.
|
|
1976
|
19 |
3 |
p. 249-254
6 p.
|
article
|
| 7 |
Exact capacitance of a lossless MOS capacitor
|
McNutt, M.J.
|
|
1976
|
19 |
3 |
p. 255-257
3 p.
|
article
|
| 8 |
Fabrication and characteristics of MOS-FET's incorporating anodic aluminum oxide in the gate structure
|
Raymond, Ronald K.
|
|
1976
|
19 |
3 |
p. 181-184
4 p.
|
article
|
| 9 |
High-field transport in NiO and Ni1−x Li xO thin films
|
Fuschillo, Nicholas
|
|
1976
|
19 |
3 |
p. 209-219
11 p.
|
article
|
| 10 |
Theoretical analysis of graded-band-gap gallium-aluminum arsenide/gallium arsenide p-Ga 1 t ̄ x Al x As/p-GaAs/n-GaAs solar cells
|
Konagai, M.
|
|
1976
|
19 |
3 |
p. 259-264
6 p.
|
article
|
| 11 |
Theoretical and experimental study of MOS transistors nonuniformly doped by SILOX technique
|
Doucet, G.
|
|
1976
|
19 |
3 |
p. 191-199
9 p.
|
article
|
| 12 |
The use of charge pumping currents to measure surface state densities in MOS transistors
|
Elliot, Alexander B.M.
|
|
1976
|
19 |
3 |
p. 241-247
7 p.
|
article
|
| 13 |
Time-dependent MOS breakdown
|
Li, Seung P.
|
|
1976
|
19 |
3 |
p. 235-239
5 p.
|
article
|
Journal description