| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A method for investigation of fluctuations in doping concentration and minority-carrier diffusion length in semiconductors by scanning electron microscope
|
Kamm, J.D.
|
|
1976
|
19 |
11 |
p. 921-924
4 p.
|
artikel
|
| 2 |
Channel edge location and potential distribution in a junction field effect transistor
|
Regier, Frank A.
|
|
1976
|
19 |
11 |
p. 969-971
3 p.
|
artikel
|
| 3 |
Editorial announcement
|
|
|
1976
|
19 |
11 |
p. I-
1 p.
|
artikel
|
| 4 |
Electrical properties of be-implanted GaA1-x P x
|
Chatterjee, Pallab K.
|
|
1976
|
19 |
11 |
p. 961-964
4 p.
|
artikel
|
| 5 |
Electron ground state in the semiconductor inversion layer and low frequency MIS capacitance
|
Djurić, Z.
|
|
1976
|
19 |
11 |
p. 931-934
4 p.
|
artikel
|
| 6 |
Impatt characterization as a mildly nonlinear devices
|
Chiabrera, A.
|
|
1976
|
19 |
11 |
p. 911-919
9 p.
|
artikel
|
| 7 |
Modelling of channel enhancement effects on the write characteristics of FAMOS devices
|
Card, H.C.
|
|
1976
|
19 |
11 |
p. 965-968
4 p.
|
artikel
|
| 8 |
Noise associated with recombination in the emitter space charge region of transistors
|
Wade, T.E.
|
|
1976
|
19 |
11 |
p. 909-910
2 p.
|
artikel
|
| 9 |
Ohmic contact to p-type GaP
|
Pfeifer, J.
|
|
1976
|
19 |
11 |
p. 927-928
2 p.
|
artikel
|
| 10 |
Space charge created by an ohmic injecting contact, and its effects in an electrolyte-insulator system with traps distributed non-uniformly in energy and in space
|
Elsharkawi, A.R.
|
|
1976
|
19 |
11 |
p. 939-947
9 p.
|
artikel
|
| 11 |
Stable and unstable surface state charge in thermally oxidized silicon
|
Breed, D.J.
|
|
1976
|
19 |
11 |
p. 897-907
11 p.
|
artikel
|
| 12 |
Temperature dependence of resistivity and hole conductivity mobility in p-type silicon
|
Tsao, K.Y.
|
|
1976
|
19 |
11 |
p. 949-953
5 p.
|
artikel
|
| 13 |
The effects of radiation damage on the properties of Ni-nGaAs Schottky diodes—III Annealing studies
|
Taylor, Paul D.
|
|
1976
|
19 |
11 |
p. 935-938
4 p.
|
artikel
|
| 14 |
The effects of stacking faults on the electrical properties of a high voltage power transistor
|
Kato, T.
|
|
1976
|
19 |
11 |
p. 955-956
2 p.
|
artikel
|
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