| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A Computationally Efficient Quantum-Corrected Poisson Solver for accurate Device Simulation of Multi-Gate FETs
|
Ojha, Apoorva
|
|
2019
|
160 |
C |
p.
|
artikel
|
| 2 |
An ESD robust high holding voltage dual-direction SCR with symmetrical I-V curve by inserting a floating P+ in PWell
|
Chen, Xijun
|
|
2019
|
160 |
C |
p.
|
artikel
|
| 3 |
Editorial Board
|
|
|
2019
|
160 |
C |
p.
|
artikel
|
| 4 |
Electrical Tunability of Partially Depleted Silicon on Insulator (PD-SOI) Neuron
|
Dutta, Sangya
|
|
2019
|
160 |
C |
p.
|
artikel
|
| 5 |
Explicit approximation of the surface potential equation of a dynamically depleted silicon-on-insulator MOSFET for performance and reliability simulations
|
Livingston, Ian P.
|
|
2019
|
160 |
C |
p.
|
artikel
|
| 6 |
High performance miniaturized compact diplexer based on optimized integrated passive device fabrication technology
|
Yu, He
|
|
2019
|
160 |
C |
p.
|
artikel
|
| 7 |
Investigation of the electromechanical stability of low temperature polycrystalline silicon thin-film transistors governed by types of stress
|
Park, Chang Bum
|
|
2019
|
160 |
C |
p.
|
artikel
|
| 8 |
Millimeter-wave AlGaN/GaN HEMTs breakdown voltage enhancement by an air-bridge recessed source field plate (RSFP)
|
Zhang, S.
|
|
2019
|
160 |
C |
p.
|
artikel
|
| 9 |
Modeling of MEMS microwave integrated detector applied to 8–12 GHz receiver
|
Chen, Chen
|
|
2019
|
160 |
C |
p.
|
artikel
|
| 10 |
Temperature dependence improvement of polycrystalline-silicon tunnel field-effect thin-film transistor
|
Ma, William Cheng-Yu
|
|
2019
|
160 |
C |
p.
|
artikel
|
| 11 |
The analysis and characteristics of 4H-SiC floating junction JBS diodes with different structures underneath the termination region
|
Yuan, Hao
|
|
2019
|
160 |
C |
p.
|
artikel
|
| 12 |
The effect of electron-phonon interaction on the formation of reverse currents of p-n-junctions of silicon-based power semiconductor devices
|
Bulyarskiy, Sergey V.
|
|
2019
|
160 |
C |
p.
|
artikel
|
| 13 |
Trap-assisted tunneling current of ultrathin InAlN/GaN HEMTs on Si (1 1 1) substrate
|
Liang, Jingxian
|
|
2019
|
160 |
C |
p.
|
artikel
|
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