| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A depletion load self-aligned technology
|
Borel, J.
|
|
1973
|
16 |
12 |
p. 1377-1381
5 p.
|
artikel
|
| 2 |
Analyses of transient capacitance experiments for AuGaAs Schottky barrier diodes in the presence of deep impurities and the interfacial layer
|
Huang, Chern I.
|
|
1973
|
16 |
12 |
p. 1481-1486
6 p.
|
artikel
|
| 3 |
An analysis of the circular approximation for silicon planar junctions
|
Wilson, P.R.
|
|
1973
|
16 |
12 |
p. 1511-1515
5 p.
|
artikel
|
| 4 |
An analysis of the threshold voltage for short-channel IGFET's
|
Lee, H.S.
|
|
1973
|
16 |
12 |
p. 1407-1417
11 p.
|
artikel
|
| 5 |
An experimental determination of the ambipolar diffusion coefficient in germanium
|
Cosby, R.M.
|
|
1973
|
16 |
12 |
p. 1441-1446
6 p.
|
artikel
|
| 6 |
Boundary conditions for forward biased p-n junctions
|
Van Der Ziel, A.
|
|
1973
|
16 |
12 |
p. 1509-1511
3 p.
|
artikel
|
| 7 |
Comparison of avalanche photodiode and photoparametric upconverter signal-to-noise ratio
|
Tandon, J.C.
|
|
1973
|
16 |
12 |
p. 1503-1505
3 p.
|
artikel
|
| 8 |
Effect of chemisorbed oxygen on the Au, Cu-CdS barrier height
|
McCarthy, S.J.
|
|
1973
|
16 |
12 |
p. 1435-1439
5 p.
|
artikel
|
| 9 |
Effect of illumination on noise and some other characteristics of p-n junctions in InSb
|
Lukyanchikova, N.B.
|
|
1973
|
16 |
12 |
p. 1473-1480
8 p.
|
artikel
|
| 10 |
Effects of diffused nickel on the silicon-silicon dioxide interface
|
Liblich, S.
|
|
1973
|
16 |
12 |
p. 1495-1499
5 p.
|
artikel
|
| 11 |
Effects of electron and neutron irradiation on the electrical properties of Si on MgO·Al2O3 spinel
|
Stein, H.J.
|
|
1973
|
16 |
12 |
p. 1391-1397
7 p.
|
artikel
|
| 12 |
Effects of temperature on current instabilities caused by recombination centers in semiconductors
|
Elsharkawi, A.R.
|
|
1973
|
16 |
12 |
p. 1355-1361
7 p.
|
artikel
|
| 13 |
Experimental location of the surface and bulk 1 f noise currents in low-noise, high-gain NPN planar transistors
|
Knott, K.F.
|
|
1973
|
16 |
12 |
p. 1429-1434
6 p.
|
artikel
|
| 14 |
1 f Noise in silicon diodes
|
Jäntsch, O.
|
|
1973
|
16 |
12 |
p. 1517-1520
4 p.
|
artikel
|
| 15 |
Formation kinetics and structure of Pd2Si films on Si
|
Bower, R.W.
|
|
1973
|
16 |
12 |
p. 1461-1471
11 p.
|
artikel
|
| 16 |
Low-temperature photocapacity measurement in MOS structure
|
Kamieniecki, E.
|
|
1973
|
16 |
12 |
p. 1487-1493
7 p.
|
artikel
|
| 17 |
Magnetodiode transients
|
Pfleiderer, Hans
|
|
1973
|
16 |
12 |
p. 1347-1354
8 p.
|
artikel
|
| 18 |
Mathematical analysis of a heterojunction, applied to the copper sulphide-cadmium sulphide solar cell
|
te Velde, T.S.
|
|
1973
|
16 |
12 |
p. 1305-1314
10 p.
|
artikel
|
| 19 |
Measurement of low densities of surface states at the SiSiO2-interface
|
Declerck, G.
|
|
1973
|
16 |
12 |
p. 1451-1460
10 p.
|
artikel
|
| 20 |
Metal-germanium Schottky barriers
|
Thanailakis, A.
|
|
1973
|
16 |
12 |
p. 1383-1389
7 p.
|
artikel
|
| 21 |
Metal semiconductor contact: Resistivity and noise
|
Nougier, J.P.
|
|
1973
|
16 |
12 |
p. 1399-1405
7 p.
|
artikel
|
| 22 |
Minority carrier transport in metal-semiconductor junctions
|
Calzolari, P.U.
|
|
1973
|
16 |
12 |
p. 1501-1503
3 p.
|
artikel
|
| 23 |
Notice of meeting
|
|
|
1973
|
16 |
12 |
p. 1523-
1 p.
|
artikel
|
| 24 |
On phosphorus diffusion in silicon under oxidizing atmospheres
|
Masetti, G.
|
|
1973
|
16 |
12 |
p. 1419-1421
3 p.
|
artikel
|
| 25 |
P.I.B. International symposium—XXIII. Optical and acoustical micro-electronics
|
|
|
1973
|
16 |
12 |
p. 1521-
1 p.
|
artikel
|
| 26 |
P-I-N junctions in polycrystalline-silicon
|
Mónico-García, J.P.
|
|
1973
|
16 |
12 |
p. 1515-1517
3 p.
|
artikel
|
| 27 |
Single-section lumped models for integrated circuit resistors
|
Bhattacharyya, A.B.
|
|
1973
|
16 |
12 |
p. 1506-1509
4 p.
|
artikel
|
| 28 |
Some pitfalls in fast ramp C-V measurements
|
McCaughan, Daniel V.
|
|
1973
|
16 |
12 |
p. 1423-1427
5 p.
|
artikel
|
| 29 |
Surface charge and stress in the Si/SiO2 system
|
Brotherton, S.D.
|
|
1973
|
16 |
12 |
p. 1367-1375
9 p.
|
artikel
|
| 30 |
Surface effects of GaAs0·6P0·4 light emitting diodes
|
Leistiko Jr., O.
|
|
1973
|
16 |
12 |
p. 1321-1336
16 p.
|
artikel
|
| 31 |
Thermal effects on the forward characteristics of silicon p-i-n diodes at high pulse currents
|
Silber, D.
|
|
1973
|
16 |
12 |
p. 1337-1346
10 p.
|
artikel
|
| 32 |
Thermal noise of a silicon double-injection plasma diode
|
Bilger, H.R.
|
|
1973
|
16 |
12 |
p. 1363-1365
3 p.
|
artikel
|
| 33 |
Thermal properties of annular and array geometry semiconductor devices on composite heat sinks
|
Board, K.
|
|
1973
|
16 |
12 |
p. 1315-1320
6 p.
|
artikel
|
| 34 |
Transport in semiconductors with low scattering rate and at high frequencies
|
Sah, C.T.
|
|
1973
|
16 |
12 |
p. 1447-1449
3 p.
|
artikel
|
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