nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A method to extract interface state parameters from the MIS parallel conductance technique
|
Simonne, J.J. |
|
1973 |
16 |
1 |
p. 121-124 4 p. |
artikel |
2 |
An all-bipolar image sensor
|
Kasperkovitz, D. |
|
1973 |
16 |
1 |
p. 67-70 4 p. |
artikel |
3 |
Behavior of AlSi Schottky barrier diodes under heat treatment
|
Chino, K. |
|
1973 |
16 |
1 |
p. 119-120 2 p. |
artikel |
4 |
Capacitive effects of Au and Cu impurity levels in Pt-N type Si Schottky barriers
|
Roberts, G.I. |
|
1973 |
16 |
1 |
p. 29-38 10 p. |
artikel |
5 |
Editorial Board
|
|
|
1973 |
16 |
1 |
p. IFC- 1 p. |
artikel |
6 |
Effective mobility and bulk trapping in heavily doped CdSe
|
Van Calster, A. |
|
1973 |
16 |
1 |
p. 117-119 3 p. |
artikel |
7 |
Effects of time dependence of multiplication process on avalanche noise
|
Naqvi, I.M. |
|
1973 |
16 |
1 |
p. 19-28 10 p. |
artikel |
8 |
Epitaxial growth of silicon from SiH4 in the temperature range 800–1150°C
|
Townsend, W.G. |
|
1973 |
16 |
1 |
p. 39-42 4 p. |
artikel |
9 |
Erratum
|
|
|
1973 |
16 |
1 |
p. 127- 1 p. |
artikel |
10 |
Exact frequency dependent complex admittance of the MOS diode including surface states, Shockley-Read-Hall (SRH) impurity effects, and low temperature dopant impurity response
|
Temple, V. |
|
1973 |
16 |
1 |
p. 93-113 21 p. |
artikel |
11 |
Large barrier Cu|CdS contacts
|
McCarthy, S.J. |
|
1973 |
16 |
1 |
p. 115-116 2 p. |
artikel |
12 |
Microwave oscillations in pnp reach-through BARITT diodes
|
Chu, J.L. |
|
1973 |
16 |
1 |
p. 85-91 7 p. |
artikel |
13 |
Pre-threshold conductance and polarization effects in amorphous semiconductor switches
|
Burgess, W.D. |
|
1973 |
16 |
1 |
p. 15-16 2 p. |
artikel |
14 |
Rapid determination of semiconductor doping profiles in MOS structures
|
Zohta, Y. |
|
1973 |
16 |
1 |
p. 124-126 3 p. |
artikel |
15 |
Switching speed and power dissipation of planar-type Gunn diodes
|
Nakamura, M. |
|
1973 |
16 |
1 |
p. 75-78 4 p. |
artikel |
16 |
Systematic computer-aided multidimensional modeling of integrated bipolar devices
|
Fossum, J.G. |
|
1973 |
16 |
1 |
p. 1-14 14 p. |
artikel |
17 |
Theory of dynamic charge and capacitance characteristics in MIS systems containing discrete surface traps
|
Simmons, J.G. |
|
1973 |
16 |
1 |
p. 43-52 10 p. |
artikel |
18 |
Theory of dynamic charge current and capacitance characteristics in MIS systems containing distributed surface traps
|
Simmons, J.G. |
|
1973 |
16 |
1 |
p. 53-66 14 p. |
artikel |