| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A flexible characterization methodology of RRAM: Application to the modeling of the conductivity changes as synaptic weight updates
|
Pedro, M.
|
|
2019
|
159 |
C |
p. 57-62
|
artikel
|
| 2 |
Analytical modeling of capacitances in tunnel-FETs including the effect of Schottky barrier contacts
|
Farokhnejad, Atieh
|
|
2019
|
159 |
C |
p. 191-196
|
artikel
|
| 3 |
A new method for characterization of gate overlap capacitances and effective channel size in MOSFETs
|
Tomaszewski, Daniel
|
|
2019
|
159 |
C |
p. 184-190
|
artikel
|
| 4 |
A smart noise- and RTN-removal method for parameter extraction of CMOS aging compact models
|
Diaz-Fortuny, Javier
|
|
2019
|
159 |
C |
p. 99-105
|
artikel
|
| 5 |
A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations
|
Donetti, L.
|
|
2019
|
159 |
C |
p. 19-25
|
artikel
|
| 6 |
Characterization and modeling of 28-nm FDSOI CMOS technology down to cryogenic temperatures
|
Beckers, Arnout
|
|
2019
|
159 |
C |
p. 106-115
|
artikel
|
| 7 |
Characterization of the interface-driven 1st Reset operation in HfO2-based 1T1R RRAM devices
|
Pérez, Eduardo
|
|
2019
|
159 |
C |
p. 51-56
|
artikel
|
| 8 |
Compact modeling of triple gate junctionless MOSFETs for accurate circuit design in a wide temperature range
|
Pavanello, Marcelo Antonio
|
|
2019
|
159 |
C |
p. 116-122
|
artikel
|
| 9 |
Comparison of memory effect with voltage or current charging pulse bias in MIS structures based on codoped Si-NCs embedded in SiO2 or HfOx
|
Mazurak, Andrzej
|
|
2019
|
159 |
C |
p. 157-164
|
artikel
|
| 10 |
Current and shot noise at spin-dependent hopping through junctions with ferromagnetic contacts
|
Sverdlov, Viktor
|
|
2019
|
159 |
C |
p. 43-50
|
artikel
|
| 11 |
2D and 3D TCAD simulation of III-V channel FETs at the end of scaling
|
Aguirre, P.
|
|
2019
|
159 |
C |
p. 123-128
|
artikel
|
| 12 |
Doping profile extraction in thin SOI films: Application to A2RAM
|
Tcheme Wakam, F.
|
|
2019
|
159 |
C |
p. 3-11
|
artikel
|
| 13 |
Editorial Board
|
|
|
2019
|
159 |
C |
p. ii
|
artikel
|
| 14 |
Effect of degree of strain relaxation on polarization charges of GaN/InGaN/GaN hexagonal and triangular nanowire solar cells
|
Routray, S.R.
|
|
2019
|
159 |
C |
p. 142-149
|
artikel
|
| 15 |
Effects of mole fraction variations and scaling on total variability in InGaAs MOSFETs
|
Zagni, Nicolò
|
|
2019
|
159 |
C |
p. 135-141
|
artikel
|
| 16 |
Experimental analysis and improvement of the DC method for self-heating estimation
|
Mori, C.A.B.
|
|
2019
|
159 |
C |
p. 171-176
|
artikel
|
| 17 |
Ferroelectric properties of SOS and SOI pseudo-MOSFETs with HfO2 interlayers
|
Popov, V.P.
|
|
2019
|
159 |
C |
p. 63-70
|
artikel
|
| 18 |
GDNMOS and GDBIMOS devices for high voltage ESD protection in thin film advanced FD-SOI technology
|
De Conti, Louise
|
|
2019
|
159 |
C |
p. 90-98
|
artikel
|
| 19 |
Impact of contact and channel resistance on the frequency-dependent capacitance and conductance of pseudo-MOSFET
|
Sato, S.
|
|
2019
|
159 |
C |
p. 197-203
|
artikel
|
| 20 |
Impact of threshold voltage extraction methods on semiconductor device variability
|
Espiñera, G.
|
|
2019
|
159 |
C |
p. 165-170
|
artikel
|
| 21 |
Investigation of built-in bipolar junction transistor in FD-SOI BIMOS
|
Bédécarrats, Thomas
|
|
2019
|
159 |
C |
p. 177-183
|
artikel
|
| 22 |
Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells
|
Navarro, S.
|
|
2019
|
159 |
C |
p. 12-18
|
artikel
|
| 23 |
Low temperature influence on performance and transport of Ω-gate p-type SiGe-on-insulator nanowire MOSFETs
|
Paz, Bruna Cardoso
|
|
2019
|
159 |
C |
p. 83-89
|
artikel
|
| 24 |
Near-field scanning microwave microscope platform based on a coaxial cavity resonator for the characterization of semiconductor structures
|
Bagdad, Bendehiba Abadlia
|
|
2019
|
159 |
C |
p. 150-156
|
artikel
|
| 25 |
New prospects on high on-current and steep subthreshold slope for innovative Tunnel FET architectures
|
Diaz Llorente, C.
|
|
2019
|
159 |
C |
p. 26-37
|
artikel
|
| 26 |
28 nm FDSOI analog and RF Figures of Merit at N2 cryogenic temperatures
|
Kazemi Esfeh, B.
|
|
2019
|
159 |
C |
p. 77-82
|
artikel
|
| 27 |
Quantum modeling of threshold voltage in Ge dual material gate (DMG) FinFET
|
Saha, Rajesh
|
|
2019
|
159 |
C |
p. 129-134
|
artikel
|
| 28 |
TFET inverter static and transient performances in presence of traps and localized strain
|
Gnani, E.
|
|
2019
|
159 |
C |
p. 38-42
|
artikel
|
| 29 |
This special issue is devoted to selected papers presented at the EuroSOI-ULIS2018 international conference, held in Granada, Spain on 19–21 March 2018
|
Gamiz, Francisco
|
|
2019
|
159 |
C |
p. 1-2
|
artikel
|
| 30 |
Transient negative capacitance and charge trapping in FDSOI MOSFETs with ferroelectric HfYOX
|
Han, Qinghua
|
|
2019
|
159 |
C |
p. 71-76
|
artikel
|
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