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                             14 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Characterization studies of NiO:K anode buffer layer in Alq3 and TADF-based organic light-emitting diodes by secondary ion mass spectrometry and admittance spectroscopy Malvin,
2019
158 C p. 85-91
artikel
2 DC and RF performances of InAs FinFET and GAA MOSFET on insulator Cheng, Qi
2019
158 C p. 11-15
artikel
3 Editorial Board 2019
158 C p. ii
artikel
4 Enhanced resistive switching performance of aluminum oxide dielectric with a low temperature solution-processed method Qi, Yanfei
2019
158 C p. 28-36
artikel
5 Experimental and modeling insight for fin-shaped transistors based on AlN/GaN/AlN double barrier heterostructure Doundoulakis, G.
2019
158 C p. 1-10
artikel
6 High mobility solution processed MoS2 thin film transistors Gomes, Francis Oliver Vinay
2019
158 C p. 75-84
artikel
7 Influence of semiconductor crystallinity on a β-FeSi2 sensitized thermal cell Matsushita, Sachiko
2019
158 C p. 70-74
artikel
8 Interface state degradation during AC positive bias temperature instability stress Kang, Soo Cheol
2019
158 C p. 46-50
artikel
9 Investigation on the improvement of stability of nitrogen doped amorphous SiInZnO thin-film transistors Lee, Byeong Hyeon
2019
158 C p. 59-63
artikel
10 Junctionless nanowire transistors parameters extraction based on drain current measurements Trevisoli, Renan
2019
158 C p. 37-45
artikel
11 Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment Kurt, Gokhan
2019
158 C p. 22-27
artikel
12 Optimization of a TiSi2 formation based on PECVD Ti using DoE methodology Hößler, Diana
2019
158 C p. 51-58
artikel
13 Resistive random-access memory with an a-Si/SiNx double-layer Kwon, Hui Tae
2019
158 C p. 64-69
artikel
14 Temperature distribution measurement based on field-programmable gate array embedded ring oscillators Yu, Wenjuan
2019
158 C p. 16-21
artikel
                             14 gevonden resultaten
 
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