nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Characterization studies of NiO:K anode buffer layer in Alq3 and TADF-based organic light-emitting diodes by secondary ion mass spectrometry and admittance spectroscopy
|
Malvin, |
|
2019 |
158 |
C |
p. 85-91 |
artikel |
2 |
DC and RF performances of InAs FinFET and GAA MOSFET on insulator
|
Cheng, Qi |
|
2019 |
158 |
C |
p. 11-15 |
artikel |
3 |
Editorial Board
|
|
|
2019 |
158 |
C |
p. ii |
artikel |
4 |
Enhanced resistive switching performance of aluminum oxide dielectric with a low temperature solution-processed method
|
Qi, Yanfei |
|
2019 |
158 |
C |
p. 28-36 |
artikel |
5 |
Experimental and modeling insight for fin-shaped transistors based on AlN/GaN/AlN double barrier heterostructure
|
Doundoulakis, G. |
|
2019 |
158 |
C |
p. 1-10 |
artikel |
6 |
High mobility solution processed MoS2 thin film transistors
|
Gomes, Francis Oliver Vinay |
|
2019 |
158 |
C |
p. 75-84 |
artikel |
7 |
Influence of semiconductor crystallinity on a β-FeSi2 sensitized thermal cell
|
Matsushita, Sachiko |
|
2019 |
158 |
C |
p. 70-74 |
artikel |
8 |
Interface state degradation during AC positive bias temperature instability stress
|
Kang, Soo Cheol |
|
2019 |
158 |
C |
p. 46-50 |
artikel |
9 |
Investigation on the improvement of stability of nitrogen doped amorphous SiInZnO thin-film transistors
|
Lee, Byeong Hyeon |
|
2019 |
158 |
C |
p. 59-63 |
artikel |
10 |
Junctionless nanowire transistors parameters extraction based on drain current measurements
|
Trevisoli, Renan |
|
2019 |
158 |
C |
p. 37-45 |
artikel |
11 |
Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment
|
Kurt, Gokhan |
|
2019 |
158 |
C |
p. 22-27 |
artikel |
12 |
Optimization of a TiSi2 formation based on PECVD Ti using DoE methodology
|
Hößler, Diana |
|
2019 |
158 |
C |
p. 51-58 |
artikel |
13 |
Resistive random-access memory with an a-Si/SiNx double-layer
|
Kwon, Hui Tae |
|
2019 |
158 |
C |
p. 64-69 |
artikel |
14 |
Temperature distribution measurement based on field-programmable gate array embedded ring oscillators
|
Yu, Wenjuan |
|
2019 |
158 |
C |
p. 16-21 |
artikel |