| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new method for determination of PAD capacitances for GaAs HBTs based on scalable small signal equivalent circuit model
|
Zhang, Ao
|
|
2018
|
150 |
C |
p. 45-50
|
artikel
|
| 2 |
A tunnel FET compact model including non-idealities with verilog implementation
|
Sajjad, Redwan N.
|
|
2018
|
150 |
C |
p. 16-22
|
artikel
|
| 3 |
Design, fabrication and characterization of SAW devices on LiNbO3 bulk and ZnO thin film substrates
|
Hu, Mingkai
|
|
2018
|
150 |
C |
p. 28-34
|
artikel
|
| 4 |
Editorial Board
|
|
|
2018
|
150 |
C |
p. ii
|
artikel
|
| 5 |
Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p +-Si RRAM for synaptic device application
|
Bang, Suhyun
|
|
2018
|
150 |
C |
p. 60-65
|
artikel
|
| 6 |
Impact of the post-thermal annealing on OFETs using printed contacts, printed organic gate insulator and evaporated C60 active layer
|
Tao, Zhi
|
|
2018
|
150 |
C |
p. 51-59
|
artikel
|
| 7 |
Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O2 plasma treatment
|
Knobelspies, S.
|
|
2018
|
150 |
C |
p. 23-27
|
artikel
|
| 8 |
Introduction of lithography-compatible conducting polymer as flexible electrode for oxide-based charge-trap memory transistors on plastic poly(ethylene naphthalate) substrates
|
Yang, Ji-Hee
|
|
2018
|
150 |
C |
p. 35-40
|
artikel
|
| 9 |
Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors – Physical interpretation of transport phenomena
|
Nafaa, B.
|
|
2018
|
150 |
C |
p. 1-7
|
artikel
|
| 10 |
Low-voltage electric-double-layer MoS2 transistor gated via water solution
|
Guo, Junjie
|
|
2018
|
150 |
C |
p. 8-15
|
artikel
|
| 11 |
Parasitic engineering for RRAM control
|
Shrestha, P.R.
|
|
2018
|
150 |
C |
p. 41-44
|
artikel
|
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