nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Bestimmung der zusammensetzung von ternären III–V-verbindungshalbleitern aus dem spektrum der oberflächenfotospannung
|
Graff, K. |
|
1972 |
15 |
7 |
p. 831-837 7 p. |
artikel |
2 |
Books received
|
|
|
1972 |
15 |
7 |
p. 839- 1 p. |
artikel |
3 |
Calculation of spreading resistance correction factors
|
Hu, S.M. |
|
1972 |
15 |
7 |
p. 809-817 9 p. |
artikel |
4 |
Current transport in metal semiconductor contacts—a unified approach
|
Fonash, S.J. |
|
1972 |
15 |
7 |
p. 783-787 5 p. |
artikel |
5 |
Effect of band structure on the voltage-current characteristics of metal-insulator-metal tunnel junctions
|
Sarnot, S.L. |
|
1972 |
15 |
7 |
p. 745-752 8 p. |
artikel |
6 |
Field-effects in polycrystalline-silicon films
|
Kamins, T.I. |
|
1972 |
15 |
7 |
p. 789-799 11 p. |
artikel |
7 |
Fundamental limitations in microelectronics—I. MOS technology
|
Hoeneisen, B. |
|
1972 |
15 |
7 |
p. 819-829 11 p. |
artikel |
8 |
Gas doping of vacuum evaporated epitaxial silicon films
|
Shewchun, J. |
|
1972 |
15 |
7 |
p. 775-781 7 p. |
artikel |
9 |
L'effet des dislocations cristallines sur le bruit en creneaux des transistors bipolaires au silicium
|
Martin, J.C. |
|
1972 |
15 |
7 |
p. 739-744 6 p. |
artikel |
10 |
Modification of the c-axis orientation of hexagonal cadmium sulfide films by a new technique of evaporation by reflection
|
Le Floch, G. |
|
1972 |
15 |
7 |
p. 753-756 4 p. |
artikel |
11 |
Nature of current and of forward-bias electroluminescence excess noise in GaAs-diodes
|
Lukyanchikova, N.B. |
|
1972 |
15 |
7 |
p. 801-807 7 p. |
artikel |
12 |
On the frequency dependence of GaAs Schottky barrier capacitances
|
Hesse, K. |
|
1972 |
15 |
7 |
p. 767-774 8 p. |
artikel |
13 |
The electrical conduction of As2Se3 glass at high fields
|
de Wit, H.J. |
|
1972 |
15 |
7 |
p. 729-738 10 p. |
artikel |
14 |
The influence of temperature on spreading resistance measurement
|
Kramer, P. |
|
1972 |
15 |
7 |
p. 757-766 10 p. |
artikel |