| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Bestimmung der zusammensetzung von ternären III–V-verbindungshalbleitern aus dem spektrum der oberflächenfotospannung
|
Graff, K.
|
|
1972
|
15 |
7 |
p. 831-837
7 p.
|
article
|
| 2 |
Books received
|
|
|
1972
|
15 |
7 |
p. 839-
1 p.
|
article
|
| 3 |
Calculation of spreading resistance correction factors
|
Hu, S.M.
|
|
1972
|
15 |
7 |
p. 809-817
9 p.
|
article
|
| 4 |
Current transport in metal semiconductor contacts—a unified approach
|
Fonash, S.J.
|
|
1972
|
15 |
7 |
p. 783-787
5 p.
|
article
|
| 5 |
Effect of band structure on the voltage-current characteristics of metal-insulator-metal tunnel junctions
|
Sarnot, S.L.
|
|
1972
|
15 |
7 |
p. 745-752
8 p.
|
article
|
| 6 |
Field-effects in polycrystalline-silicon films
|
Kamins, T.I.
|
|
1972
|
15 |
7 |
p. 789-799
11 p.
|
article
|
| 7 |
Fundamental limitations in microelectronics—I. MOS technology
|
Hoeneisen, B.
|
|
1972
|
15 |
7 |
p. 819-829
11 p.
|
article
|
| 8 |
Gas doping of vacuum evaporated epitaxial silicon films
|
Shewchun, J.
|
|
1972
|
15 |
7 |
p. 775-781
7 p.
|
article
|
| 9 |
L'effet des dislocations cristallines sur le bruit en creneaux des transistors bipolaires au silicium
|
Martin, J.C.
|
|
1972
|
15 |
7 |
p. 739-744
6 p.
|
article
|
| 10 |
Modification of the c-axis orientation of hexagonal cadmium sulfide films by a new technique of evaporation by reflection
|
Le Floch, G.
|
|
1972
|
15 |
7 |
p. 753-756
4 p.
|
article
|
| 11 |
Nature of current and of forward-bias electroluminescence excess noise in GaAs-diodes
|
Lukyanchikova, N.B.
|
|
1972
|
15 |
7 |
p. 801-807
7 p.
|
article
|
| 12 |
On the frequency dependence of GaAs Schottky barrier capacitances
|
Hesse, K.
|
|
1972
|
15 |
7 |
p. 767-774
8 p.
|
article
|
| 13 |
The electrical conduction of As2Se3 glass at high fields
|
de Wit, H.J.
|
|
1972
|
15 |
7 |
p. 729-738
10 p.
|
article
|
| 14 |
The influence of temperature on spreading resistance measurement
|
Kramer, P.
|
|
1972
|
15 |
7 |
p. 757-766
10 p.
|
article
|
Journal description