nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A simple equivalent circuit for the MNOST memory element
|
Brown, M.A.C.S. |
|
1972 |
15 |
6 |
p. 707-719 13 p. |
artikel |
2 |
Books received
|
|
|
1972 |
15 |
6 |
p. 728- 1 p. |
artikel |
3 |
Deep level impurity effects on the frequency dependence of Schottky barrier capacitance
|
Crowell, C.R. |
|
1972 |
15 |
6 |
p. 605-610 6 p. |
artikel |
4 |
Determination of the intrinsic response time of semiconductor avalanches from microwave measurements
|
Goedbloed, J.J. |
|
1972 |
15 |
6 |
p. 635-647 13 p. |
artikel |
5 |
Enhancement of breakdown properties of overlay annular diodes by field shaping resistive films
|
Clark, L.E. |
|
1972 |
15 |
6 |
p. 653-657 5 p. |
artikel |
6 |
High field effects in chalcogenide thin films
|
Stubb, T. |
|
1972 |
15 |
6 |
p. 611-616 6 p. |
artikel |
7 |
Hot electron effects in single-injection SCL diodes
|
Abdel Rahman, M. |
|
1972 |
15 |
6 |
p. 665-667 3 p. |
artikel |
8 |
Low-frequency white noise in reference diodes
|
Ringo, J.A. |
|
1972 |
15 |
6 |
p. 625-634 10 p. |
artikel |
9 |
Normalization of wave functions in an MIS structure
|
Noti, G. |
|
1972 |
15 |
6 |
p. 723-725 3 p. |
artikel |
10 |
On the conductance of p-i-n junctions at high microwave fields
|
Haine, M.E. |
|
1972 |
15 |
6 |
p. 687-705 19 p. |
artikel |
11 |
Properties of CoGaAs and NiGaAs diodes fabricated by electroless plating
|
Eimers, G.W. |
|
1972 |
15 |
6 |
p. 721-722 2 p. |
artikel |
12 |
Properties of n type Ge-doped epitaxial GaAs layers grown from Au-rich melts
|
Andrews, A.M. |
|
1972 |
15 |
6 |
p. 601-602 2 p. |
artikel |
13 |
Reverse-bias characteristics of a P +-N-N + photodiode
|
Tandon, J.C. |
|
1972 |
15 |
6 |
p. 669-685 17 p. |
artikel |
14 |
Samnos technology
|
Bazin, B. |
|
1972 |
15 |
6 |
p. 649-650 2 p. |
artikel |
15 |
Switching and memory characteristics of ZnTe thin films
|
Ota, T. |
|
1972 |
15 |
6 |
p. 725-726 2 p. |
artikel |
16 |
The combination of silicon nitride and aluminum anodization for semiconductor device passivation
|
Dell'oca, C.J. |
|
1972 |
15 |
6 |
p. 659-663 5 p. |
artikel |
17 |
Zinc diffused GaP red electroluminescent diodes with 1.5 per cent external quantum efficiency
|
Casey Jr., H.C. |
|
1972 |
15 |
6 |
p. 617-624 8 p. |
artikel |