| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical modeling of metal gate granularity based threshold voltage variability in NWFET
|
Harsha Vardhan, P.
|
|
2018
|
147 |
C |
p. 26-34
|
artikel
|
| 2 |
A review on terahertz photogalvanic spectroscopy of Bi2Te3- and Sb2Te3-based three dimensional topological insulators
|
Plank, Helene
|
|
2018
|
147 |
C |
p. 44-50
|
artikel
|
| 3 |
Device behaviour and zero temperature coefficients analysis for microwave GaAs HEMT
|
Alim, Mohammad A.
|
|
2018
|
147 |
C |
p. 13-18
|
artikel
|
| 4 |
Editorial Board
|
|
|
2018
|
147 |
C |
p. ii
|
artikel
|
| 5 |
Effect of MgO doping on the BiVO4 sensing electrode performance for YSZ-based potentiometric ammonia sensor
|
Wang, Chao
|
|
2018
|
147 |
C |
p. 19-25
|
artikel
|
| 6 |
Effect of two-dimensional electron gas on horizontal heat transfer in AlGaN/AlN/GaN heterojunction transistors
|
Zheng, Xiang
|
|
2018
|
147 |
C |
p. 35-38
|
artikel
|
| 7 |
Enlarged memory margins for resistive switching devices based on polyurethane film due to embedded Ag nanoparticles
|
Liu, Lu
|
|
2018
|
147 |
C |
p. 6-12
|
artikel
|
| 8 |
Lumped-element model of plasmonic solar cells
|
Kim, Chang-Hyun
|
|
2018
|
147 |
C |
p. 39-43
|
artikel
|
| 9 |
Physical origin of the non-linearity in amorphous In-Ga-Zn-O thin-film transistor current-voltage characteristics
|
Chen, Bo-Wei
|
|
2018
|
147 |
C |
p. 51-57
|
artikel
|
| 10 |
Stepper-based Lg = 0.5 μm In0.52Al0.48As/In0.7Ga0.3As PHEMTs on a 3-inch InP substrate with record product of fT and Lg
|
Baek, Ji-Min
|
|
2018
|
147 |
C |
p. 58-62
|
artikel
|
| 11 |
System-level read disturb suppression techniques of TLC NAND flash memories for Read-Hot/Cold data mixed applications
|
Watanabe, Hikaru
|
|
2018
|
147 |
C |
p. 63-77
|
artikel
|
| 12 |
Ti/Al/Ti/TiW Au-free low temperature ohmic contacts for un-doped AlGaN/GaN HEMTs
|
Li, Qixin
|
|
2018
|
147 |
C |
p. 1-5
|
artikel
|
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