| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A charge-based model of Junction Barrier Schottky rectifiers
|
Latorre-Rey, Alvaro D.
|
|
2018
|
144 |
C |
p. 67-72
|
artikel
|
| 2 |
Analysis of reverse gate leakage mechanism of AlGaN/GaN HEMTs with N2 plasma surface treatment
|
Liu, Hui
|
|
2018
|
144 |
C |
p. 60-66
|
artikel
|
| 3 |
A new approach to the extraction of single exponential diode model parameters
|
Ortiz-Conde, Adelmo
|
|
2018
|
144 |
C |
p. 33-38
|
artikel
|
| 4 |
A new high-κ Al2O3 based metal-insulator-metal antifuse
|
Tian, Min
|
|
2018
|
144 |
C |
p. 13-16
|
artikel
|
| 5 |
Circular electrodes to reduce the current variation of OTFTs with the drop-casted semiconducting layer
|
Dipu Kabir, H.M.
|
|
2018
|
144 |
C |
p. 49-53
|
artikel
|
| 6 |
Contacting graphene in a 200 mm wafer silicon technology environment
|
Lisker, Marco
|
|
2018
|
144 |
C |
p. 17-21
|
artikel
|
| 7 |
Editorial Board
|
|
|
2018
|
144 |
C |
p. ii
|
artikel
|
| 8 |
Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination
|
Cho, Yong-Jung
|
|
2018
|
144 |
C |
p. 95-100
|
artikel
|
| 9 |
Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes
|
Matthus, Christian D.
|
|
2018
|
144 |
C |
p. 101-105
|
artikel
|
| 10 |
Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene
|
Heidler, Jonas
|
|
2018
|
144 |
C |
p. 90-94
|
artikel
|
| 11 |
Graphene/black phosphorus heterostructured photodetector
|
Xu, Jiao
|
|
2018
|
144 |
C |
p. 86-89
|
artikel
|
| 12 |
Hybrid solar cells composed of perovskite and polymer photovoltaic structures
|
Phaometvarithorn, Apatsanan
|
|
2018
|
144 |
C |
p. 7-12
|
artikel
|
| 13 |
Low-power logic computing realized in a single electric-double-layer MoS2 transistor gated with polymer electrolyte
|
Guo, Junjie
|
|
2018
|
144 |
C |
p. 1-6
|
artikel
|
| 14 |
Modeling drain current of indium zinc oxide thin film transistors prepared by solution deposition technique
|
Qiang, Lei
|
|
2018
|
144 |
C |
p. 22-27
|
artikel
|
| 15 |
Modeling of an 8–12 GHz receiver front-end based on an in-line MEMS frequency discriminator
|
Chu, Chenlei
|
|
2018
|
144 |
C |
p. 54-59
|
artikel
|
| 16 |
New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration
|
Diaz Llorente, C.
|
|
2018
|
144 |
C |
p. 78-85
|
artikel
|
| 17 |
Performance analysis and simulation of vertical gallium nitride nanowire transistors
|
Witzigmann, Bernd
|
|
2018
|
144 |
C |
p. 73-77
|
artikel
|
| 18 |
Performance enhancement of pentacene-based organic thin-film transistors using 6,13-pentacenequinone as a carrier injection interlayer
|
Fan, Ching-Lin
|
|
2018
|
144 |
C |
p. 28-32
|
artikel
|
| 19 |
The photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes
|
Karabulut, Abdulkerim
|
|
2018
|
144 |
C |
p. 39-48
|
artikel
|
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