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                                       Details for article 8 of 19 found articles
 
 
  Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination
 
 
Title: Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination
Author: Cho, Yong-Jung
Kim, Woo-Sic
Lee, Yeol-Hyeong
Park, Jeong Ki
Kim, Geon Tae
Kim, Ohyun
Appeared in: Solid-state electronics
Paging: Volume 144 (2018) nr. C pages 95-100
Year: 2018
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 8 of 19 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands