| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Application of CTLM method combining interfacial structure characterization to investigate contact formation of silver paste metallization on crystalline silicon solar cells
|
Xiong, Shenghu
|
|
2018
|
142 |
C |
p. 1-7
|
artikel
|
| 2 |
Compact modeling of nanoscale triple-gate junctionless transistors covering drift-diffusion to quasi-ballistic carrier transport
|
Oproglidis, T.A.
|
|
2018
|
142 |
C |
p. 25-30
|
artikel
|
| 3 |
Editorial Board
|
|
|
2018
|
142 |
C |
p. ii
|
artikel
|
| 4 |
Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al2O3 surface passivation
|
Asif, Muhammad
|
|
2018
|
142 |
C |
p. 36-40
|
artikel
|
| 5 |
Impulse response measurement in the HgCdTe avalanche photodiode
|
Singh, Anand
|
|
2018
|
142 |
C |
p. 41-46
|
artikel
|
| 6 |
Leakage current suppression with a combination of planarized gate and overlap/off-set structure in metal-induced laterally crystallized polycrystalline-silicon thin-film transistors
|
Chae, Hee Jae
|
|
2018
|
142 |
C |
p. 20-24
|
artikel
|
| 7 |
Lifetime prediction of InGaZnO thin film transistor for the application of display device and BEOL-transistors
|
Kim, Sang Min
|
|
2018
|
142 |
C |
p. 14-19
|
artikel
|
| 8 |
Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS
|
Mohamed, A.H.
|
|
2018
|
142 |
C |
p. 31-35
|
artikel
|
| 9 |
Resistive RAMs as analog trimming elements
|
Aziza, H.
|
|
2018
|
142 |
C |
p. 52-55
|
artikel
|
| 10 |
Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT
|
Malik, Amit
|
|
2018
|
142 |
C |
p. 8-13
|
artikel
|
| 11 |
SOI MESFETs on high-resistivity, trap-rich substrates
|
Mehr, Payam
|
|
2018
|
142 |
C |
p. 47-51
|
artikel
|
| 12 |
Solution-processed flexible NiO resistive random access memory device
|
Kim, Soo-Jung
|
|
2018
|
142 |
C |
p. 56-61
|
artikel
|
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