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Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 8 of 12 found articles
| Title: |
Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS |
| Author: |
Mohamed, A.H. Oxland, R. Aldegunde, M. Hepplestone, S.P. Sushko, P.V. Kalna, K. |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 142 (2018) nr. C pages 31-35 |
| Year: |
2018 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 8 of 12 found articles
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