| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A deterministic guide for material and mode dependence of on-chip electro-optic modulator performance
|
Amin, Rubab
|
|
2017
|
136 |
C |
p. 92-101
|
artikel
|
| 2 |
Analysis and optimization of RC delay in vertical nanoplate FET
|
Woo, Changbeom
|
|
2017
|
136 |
C |
p. 81-85
|
artikel
|
| 3 |
A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions
|
Clinton, Evan A.
|
|
2017
|
136 |
C |
p. 3-11
|
artikel
|
| 4 |
Biocompatibility of a quad-shank neural probe
|
Tyson, Joel
|
|
2017
|
136 |
C |
p. 113-119
|
artikel
|
| 5 |
Design and characterization of GaN p-i-n diodes for betavoltaic devices
|
Khan, Muhammad R.
|
|
2017
|
136 |
C |
p. 24-29
|
artikel
|
| 6 |
Design strategies for ultra-low power 10nm FinFETs
|
Walke, Abhijeet
|
|
2017
|
136 |
C |
p. 75-80
|
artikel
|
| 7 |
Editorial Board
|
|
|
2017
|
136 |
C |
p. IFC
|
artikel
|
| 8 |
Electrical properties of AlGaN/GaN HEMTs in stretchable geometries
|
Tompkins, R.P.
|
|
2017
|
136 |
C |
p. 36-42
|
artikel
|
| 9 |
Hyperbolic metamaterials: Novel physics and applications
|
Smolyaninov, Igor I.
|
|
2017
|
136 |
C |
p. 102-112
|
artikel
|
| 10 |
Investigation and analysis of dual-k spacer with different materials and spacer lengths for nanowire-FET performance
|
Ko, Hyungwoo
|
|
2017
|
136 |
C |
p. 68-74
|
artikel
|
| 11 |
Ion/Ioff ratio enhancement and scalability of gate-all-around nanowire negative-capacitance FET with ferroelectric HfO2
|
Jang, Kyungmin
|
|
2017
|
136 |
C |
p. 60-67
|
artikel
|
| 12 |
ISDRS 2016 special issue foreword
|
Iliadis, Agis A.
|
|
2017
|
136 |
C |
p. 1-2
|
artikel
|
| 13 |
On the applicability of the Natori formula to realistic multi-layer quantum well III–V FETs
|
Gili, A.
|
|
2017
|
136 |
C |
p. 55-59
|
artikel
|
| 14 |
Optical characterization and thermal properties of CVD diamond films for integration with power electronics
|
Nazari, Mohammad
|
|
2017
|
136 |
C |
p. 12-17
|
artikel
|
| 15 |
Resistive switching in a metal-insulator-metal device with γ-APTES as the insulator layer
|
Lin, Jing-Jenn
|
|
2017
|
136 |
C |
p. 86-91
|
artikel
|
| 16 |
Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films
|
Tadjer, Marko J.
|
|
2017
|
136 |
C |
p. 30-35
|
artikel
|
| 17 |
Temporal and voltage stress stability of high performance indium-zinc-oxide thin film transistors
|
Song, Yang
|
|
2017
|
136 |
C |
p. 43-50
|
artikel
|
| 18 |
Toward realization of small-size dual-band long-wavelength infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices
|
Chevallier, Romain
|
|
2017
|
136 |
C |
p. 51-54
|
artikel
|
| 19 |
X-band 5-bit MMIC phase shifter with GaN HEMT technology
|
Sun, Pengpeng
|
|
2017
|
136 |
C |
p. 18-23
|
artikel
|
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