| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comprehensive model on field-effect pnpn devices (Z2-FET)
|
Taur, Yuan
|
|
2017
|
134 |
C |
p. 1-8
8 p.
|
artikel
|
| 2 |
AlGaN/GaN-on-Si monolithic power-switching device with integrated gate current booster
|
Han, Sang-Woo
|
|
2017
|
134 |
C |
p. 30-38
9 p.
|
artikel
|
| 3 |
Editorial Board
|
|
|
2017
|
134 |
C |
p. IFC-
1 p.
|
artikel
|
| 4 |
Endurance degradation and lifetime model of p-channel floating gate flash memory device with 2T structure
|
Wei, Jiaxing
|
|
2017
|
134 |
C |
p. 58-64
7 p.
|
artikel
|
| 5 |
Feasibility study of current pulse induced 2-bit/4-state multilevel programming in phase-change memory
|
Liu, Yan
|
|
2017
|
134 |
C |
p. 51-57
7 p.
|
artikel
|
| 6 |
High-performance and high-reliability SOT-6 packaged diplexer based on advanced IPD fabrication techniques
|
Qiang, Tian
|
|
2017
|
134 |
C |
p. 9-18
10 p.
|
artikel
|
| 7 |
High sensitivity pH sensing on the BEOL of industrial FDSOI transistors
|
Rahhal, Lama
|
|
2017
|
134 |
C |
p. 22-29
8 p.
|
artikel
|
| 8 |
Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate
|
Zhang, Zhili
|
|
2017
|
134 |
C |
p. 39-45
7 p.
|
artikel
|
| 9 |
Nonlinear conductivity in silicon nitride
|
Tuncer, Enis
|
|
2017
|
134 |
C |
p. 46-50
5 p.
|
artikel
|
| 10 |
Room-temperature fabrication of a Ga-Sn-O thin-film transistor
|
Matsuda, Tokiyoshi
|
|
2017
|
134 |
C |
p. 19-21
3 p.
|
artikel
|
| 11 |
Submillimeter wave GaAs Schottky diode application based study and optimization for 0.1–1.5 THz
|
Jenabi, Sarvenaz
|
|
2017
|
134 |
C |
p. 65-73
9 p.
|
artikel
|
| 12 |
Surface potential based modeling of charge, current, and capacitances in DGTFET including mobile channel charge and ambipolar behaviour
|
Jain, Prateek
|
|
2017
|
134 |
C |
p. 74-81
8 p.
|
artikel
|
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