| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Alternating current admittance of double injection diodes in the ohmic and the ohmic relaxation regime
|
van der Ziel, A.
|
|
|
13 |
2 |
p. 191-193
|
artikel
|
| 2 |
Anomalous diffusion in semiconductorsȁa quantitative analysis
|
Thai, N.D.
|
|
|
13 |
2 |
p. 165-172
|
artikel
|
| 3 |
Characteristics of aluminum-silicon schottky barrier diode
|
Yu, A.Y.C.
|
|
|
13 |
2 |
p. 97-104
|
artikel
|
| 4 |
Effect of the displacement current on the alternating current admittance of a double injection diode
|
Van Der Ziel, A.
|
|
|
13 |
2 |
p. 195-197
|
artikel
|
| 5 |
Electron tunneling and contact resistance of metal-silicon contact barriers
|
Yu, A.Y.C.
|
|
|
13 |
2 |
p. 239-247
|
artikel
|
| 6 |
GaAs junction lasers containing the amphoteric dopants Ge and Si
|
Burnham, R.D.
|
|
|
13 |
2 |
p. 199-205
|
artikel
|
| 7 |
Geometrical magnetoresistance and hall mobility in gunn effect devices
|
Jervis, T.R.
|
|
|
13 |
2 |
p. 181-189
|
artikel
|
| 8 |
Hall effect measurements on Sb and Ga implanted silicon; Anneal behavior and comparison with other species
|
Johansson, N.G.E.
|
|
|
13 |
2 |
p. 123-130
|
artikel
|
| 9 |
Ladungsbedingter schaltmechanismus in glashalbleitern
|
Haberland, D.R.
|
|
|
13 |
2 |
p. 207-217
|
artikel
|
| 10 |
Long channel MOS transistor (LOMOST) as a current stabilizer
|
Kassabov, J.
|
|
|
13 |
2 |
p. 161-164
|
artikel
|
| 11 |
Magnetische sperrschicht an InSb und ihre steuerung mittels feld-effekt
|
Preuss, Ekkehard
|
|
|
13 |
2 |
p. 173-179
|
artikel
|
| 12 |
On the peculiarities of copper deposition from aqueous solutions on germanium
|
Keiler, D.
|
|
|
13 |
2 |
p. 249-252, IN8-IN10, 253-255
|
artikel
|
| 13 |
Planar Hall effect in heavy dopedn-InSb and its influence on the measurement of magnetic field components with Hall generators at 4·2°K
|
Pola´k, M.
|
|
|
13 |
2 |
p. 219-227
|
artikel
|
| 14 |
Potential, field and carrier distribution in the channel of junction field-effect transistors
|
Tango, Hiroyuki
|
|
|
13 |
2 |
p. 139-144, IN5, 145-152
|
artikel
|
| 15 |
Surface properties of cadmium selenide
|
Consigny III, Rucelle L.
|
|
|
13 |
2 |
p. 113-114, IN3, 115-122
|
artikel
|
| 16 |
The implanted profiles of boron, phosphorus and arsenic in silicon from junction depth measurements
|
Davies, D. Eirug
|
|
|
13 |
2 |
p. 229-232, IN7, 233-237
|
artikel
|
| 17 |
The Nernst and the Seebeck effects in Te-doped BiSb alloys
|
Li, Sheng San
|
|
|
13 |
2 |
p. 153-160
|
artikel
|
| 18 |
The prediction of tunnel diode voltage-current characteristics
|
Demassa, Thomas A.
|
|
|
13 |
2 |
p. 131-138
|
artikel
|
| 19 |
X-ray measurement of elastic strain and annealing in semiconductors
|
Cohen, B.G.
|
|
|
13 |
2 |
p. 105-106, IN1, 107-112
|
artikel
|
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