| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical model for an asymmetric double-gate MOSFET with gate-oxide thickness and flat-band voltage variations in the subthreshold region
|
Shin, Yong Hyeon
|
|
2016
|
120 |
C |
p. 19-24
6 p.
|
artikel
|
| 2 |
An efficient method for evaluating RRAM crossbar array performance
|
Song, Lin
|
|
2016
|
120 |
C |
p. 32-40
9 p.
|
artikel
|
| 3 |
Editorial Board
|
|
|
2016
|
120 |
C |
p. IFC-
1 p.
|
artikel
|
| 4 |
Half-Corbino short-channel amorphous In–Ga–Zn–O thin-film transistors with a-SiO x or a-SiO x /a-SiN x passivation layers
|
Zhao, Chumin
|
|
2016
|
120 |
C |
p. 25-31
7 p.
|
artikel
|
| 5 |
Improving performance of inverted organic solar cells using ZTO nanoparticles as cathode buffer layer
|
Tsai, Meng-Yen
|
|
2016
|
120 |
C |
p. 56-62
7 p.
|
artikel
|
| 6 |
On the analogy of the potential barrier of trenched JFET and JBS devices
|
Bellone, Salvatore
|
|
2016
|
120 |
C |
p. 6-12
7 p.
|
artikel
|
| 7 |
Physically-based simulation of zinc oxide thin-film transistors: Contact resistance contribution on density of states
|
Dominguez, Miguel A.
|
|
2016
|
120 |
C |
p. 41-46
6 p.
|
artikel
|
| 8 |
Piecewise physical modeling of series resistance and inductance of on-chip interconnects
|
Cortés-Hernández, Diego M.
|
|
2016
|
120 |
C |
p. 1-5
5 p.
|
artikel
|
| 9 |
Superlattice-like film for high data retention and high speed phase change random access memory
|
Li, Le
|
|
2016
|
120 |
C |
p. 52-55
4 p.
|
artikel
|
| 10 |
Temperature-dependent characteristics of AlGaN/GaN FinFETs with sidewall MOS channel
|
Im, Ki-Sik
|
|
2016
|
120 |
C |
p. 47-51
5 p.
|
artikel
|
| 11 |
The influence of top electrode of InGaAsN/GaAs solar cell on their electrical parameters extracted from illuminated I–V characteristics
|
Dawidowski, Wojciech
|
|
2016
|
120 |
C |
p. 13-18
6 p.
|
artikel
|
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