| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison of two crystals of 6,13-bis (tri-isopropylsilylethynyl) pentacene (TIPS-pentacene) prepared for organic field effect transistors (OFETs)
|
Murtaza, Ghulam
|
|
2015
|
109 |
C |
p. 76-81
6 p.
|
artikel
|
| 2 |
A model of the off-behaviour of 4H–SiC power JFETs
|
Bellone, Salvatore
|
|
2015
|
109 |
C |
p. 17-24
8 p.
|
artikel
|
| 3 |
Analysis of different forward current–voltage behaviours of Al implanted 4H-SiC vertical p–i–n diodes
|
Megherbi, M.L.
|
|
2015
|
109 |
C |
p. 12-16
5 p.
|
artikel
|
| 4 |
Analysis of static noise margin improvement for low voltage SRAM composed of nano-scale MOSFETs with ideal subthreshold factor and small variability
|
Tanaka, Chika
|
|
2015
|
109 |
C |
p. 58-62
5 p.
|
artikel
|
| 5 |
A sum-over-paths algorithm for third-order impulse-response moment extraction within RC IC-interconnect networks
|
Wojcik, E.A.
|
|
2015
|
109 |
C |
p. 63-71
9 p.
|
artikel
|
| 6 |
Characterizing traps causing random telegraph noise during trap-assisted tunneling gate-induced drain leakage
|
Yoo, Sung-Won
|
|
2015
|
109 |
C |
p. 42-46
5 p.
|
artikel
|
| 7 |
Editorial Board
|
|
|
2015
|
109 |
C |
p. IFC-
1 p.
|
artikel
|
| 8 |
Effect of Ag doping and insulator buffer layer on the memory mechanism of polymer nanocomposites
|
Kaur, Ramneek
|
|
2015
|
109 |
C |
p. 82-89
8 p.
|
artikel
|
| 9 |
Effects of dielectric material properties on graphene transistor performance
|
Jang, Sung Kyu
|
|
2015
|
109 |
C |
p. 8-11
4 p.
|
artikel
|
| 10 |
Enhanced opto-electrical properties of graphene electrode InGaN/GaN LEDs with a NiO x inter-layer
|
Wu, Caichuan
|
|
2015
|
109 |
C |
p. 47-51
5 p.
|
artikel
|
| 11 |
Impact of active layer thickness in thin-film transistors based on Zinc Oxide by ultrasonic spray pyrolysis
|
Dominguez, Miguel A.
|
|
2015
|
109 |
C |
p. 33-36
4 p.
|
artikel
|
| 12 |
Investigation of proton irradiation effects on InP/InGaAs double heterojunction bipolar transistors
|
Liu, Min
|
|
2015
|
109 |
C |
p. 52-57
6 p.
|
artikel
|
| 13 |
Low operation voltage of GaN-based LEDs with Al-doped ZnO upper contact directly on p-type GaN without insert layer
|
Chen, P.H.
|
|
2015
|
109 |
C |
p. 29-32
4 p.
|
artikel
|
| 14 |
Nonvolatile bipolar resistive switching in Ba-doped BiFeO3 thin films
|
Deng, Haoliang
|
|
2015
|
109 |
C |
p. 72-75
4 p.
|
artikel
|
| 15 |
Simulation study of GaN-based HFETs with graded AlGaN barrier
|
Zhou, Xingye
|
|
2015
|
109 |
C |
p. 90-94
5 p.
|
artikel
|
| 16 |
Study on interface characteristics in amorphous indium–gallium–zinc oxide thin-film transistors by using low-frequency noise and temperature dependent mobility measurements
|
Wu, Chenfei
|
|
2015
|
109 |
C |
p. 37-41
5 p.
|
artikel
|
| 17 |
The research on temperature distribution of GaN-based blue laser diode
|
Shi, Dong
|
|
2015
|
109 |
C |
p. 25-28
4 p.
|
artikel
|
| 18 |
Word line program disturbance based data retention error recovery strategy for MLC NAND Flash
|
Ma, Haozhi
|
|
2015
|
109 |
C |
p. 1-7
7 p.
|
artikel
|
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