nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
a-GIZO TFT neural modeling, circuit simulation and validation
|
Bahubalindruni, Pydi Ganga |
|
2015 |
105 |
C |
p. 30-36 7 p. |
artikel |
2 |
AlGaN/GaN MOS-HEMTs-on-Si employing sputtered TaN-based electrodes and HfO2 gate insulator
|
Seok, Ogyun |
|
2015 |
105 |
C |
p. 1-5 5 p. |
artikel |
3 |
A link between noise parameters and light exposure in GaAs pHEMT’s
|
Caddemi, Alina |
|
2015 |
105 |
C |
p. 16-20 5 p. |
artikel |
4 |
Analytical modeling of cutoff frequency variability reserving correlations due to random dopant fluctuation in nanometer MOSFETs
|
Lü, Wei-feng |
|
2015 |
105 |
C |
p. 63-69 7 p. |
artikel |
5 |
An enhancement-mode pseudomorphic high electron mobility transistor prepared by an Electroless Plating (EP) and a gate-sinking approaches
|
Chen, Chun-Chia |
|
2015 |
105 |
C |
p. 45-50 6 p. |
artikel |
6 |
Editorial Board
|
|
|
2015 |
105 |
C |
p. IFC- 1 p. |
artikel |
7 |
Effect of annealing temperature and X-ray irradiation on the performance of tetraphenylporphyrin/p-type silicon hybrid solar cell
|
Makhlouf, M.M. |
|
2015 |
105 |
C |
p. 51-57 7 p. |
artikel |
8 |
Graphite/ZnO nanorods junction for ultraviolet photodetectors
|
Yatskiv, R. |
|
2015 |
105 |
C |
p. 70-73 4 p. |
artikel |
9 |
High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications
|
Golshani, Negin |
|
2015 |
105 |
C |
p. 6-11 6 p. |
artikel |
10 |
Impact of processing and back-gate biasing conditions on the low-frequency noise of ultra-thin buried oxide silicon-on-insulator nMOSFETs
|
Kudina, V. |
|
2015 |
105 |
C |
p. 37-44 8 p. |
artikel |
11 |
Low Turn-on voltage dual metal AlGaN/GaN Schottky barrier diode
|
Chang, Ting-Fu |
|
2015 |
105 |
C |
p. 12-15 4 p. |
artikel |
12 |
Solution-processed organic light-emitting diodes with a power efficacy exceeding 100lm/W using multiple light extraction approaches
|
Lin, Wei-Chieh |
|
2015 |
105 |
C |
p. 58-62 5 p. |
artikel |
13 |
Spice-compatible modeling of high injection and propagation of minority carriers in the substrate of Smart Power ICs
|
Stefanucci, Camillo |
|
2015 |
105 |
C |
p. 21-29 9 p. |
artikel |