nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A study on HfO2 RRAM in HRS based on I–V and RTN analysis
|
Puglisi, Francesco M. |
|
2014 |
102 |
C |
p. 69-75 7 p. |
artikel |
2 |
Characterization and modeling of electrical stress degradation in STI-based integrated power devices
|
Reggiani, Susanna |
|
2014 |
102 |
C |
p. 25-41 17 p. |
artikel |
3 |
Color recognition sensor in standard CMOS technology
|
Batistell, Graciele |
|
2014 |
102 |
C |
p. 59-68 10 p. |
artikel |
4 |
Compact modeling of STT-MTJ devices
|
Xu, Zihan |
|
2014 |
102 |
C |
p. 76-81 6 p. |
artikel |
5 |
Editorial Board
|
|
|
2014 |
102 |
C |
p. IFC- 1 p. |
artikel |
6 |
Emerging memories
|
Baldi, Livio |
|
2014 |
102 |
C |
p. 2-11 10 p. |
artikel |
7 |
Fabrication of pseudo-spin-MOSFETs using a multi-project wafer CMOS chip
|
Nakane, R. |
|
2014 |
102 |
C |
p. 52-58 7 p. |
artikel |
8 |
Foreword
|
Dascalu, Dan |
|
2014 |
102 |
C |
p. 1- 1 p. |
artikel |
9 |
Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs
|
Yoshida, Tomohiro |
|
2014 |
102 |
C |
p. 93-97 5 p. |
artikel |
10 |
Integration techniques of pHEMTs and planar Gunn diodes on GaAs substrates
|
Papageorgiou, Vasileios |
|
2014 |
102 |
C |
p. 87-92 6 p. |
artikel |
11 |
Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model
|
Morita, Yukinori |
|
2014 |
102 |
C |
p. 82-86 5 p. |
artikel |
12 |
Reconfigurable nanowire electronics – A review
|
Weber, W.M. |
|
2014 |
102 |
C |
p. 12-24 13 p. |
artikel |
13 |
Stepwise set operation for reliable switching uniformity and low operating current of ReRAMs
|
Lee, Sangheon |
|
2014 |
102 |
C |
p. 42-45 4 p. |
artikel |
14 |
Towards on-chip clocking of perpendicular Nanomagnetic Logic
|
Becherer, M. |
|
2014 |
102 |
C |
p. 46-51 6 p. |
artikel |