| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Announcement
|
|
|
1967
|
10 |
7 |
p. 736-
1 p.
|
artikel
|
| 2 |
Chemically sprayed CdS thin-film transistors
|
Heime, Klaus
|
|
1967
|
10 |
7 |
p. 732-
1 p.
|
artikel
|
| 3 |
Computer-aided transistor design, characterization, and optimization
|
Ghosh, H.N.
|
|
1967
|
10 |
7 |
p. 705-712
8 p.
|
artikel
|
| 4 |
Crystal efficiency for injection luminescence in GaAs
|
Wright, H.C.
|
|
1967
|
10 |
7 |
p. 633-639
7 p.
|
artikel
|
| 5 |
Detection properties of space-charge-limited dielectric diodes in the presence of trapping
|
Dascalu, D.
|
|
1967
|
10 |
7 |
p. 729-731
3 p.
|
artikel
|
| 6 |
Effect of offset on the Hall side resistance of a Hall generator
|
Datta, S.K.
|
|
1967
|
10 |
7 |
p. 733-735
3 p.
|
artikel
|
| 7 |
Electron beam induced potential contrast on unbiased planar transistors
|
Chang, T.H.P.
|
|
1967
|
10 |
7 |
p. 701-702
2 p.
|
artikel
|
| 8 |
GaAsInSb graded-gap heterojunction
|
Hinkley, E.D.
|
|
1967
|
10 |
7 |
p. 671-687
17 p.
|
artikel
|
| 9 |
Measurement of diffusion profile of Zn in n-type GaAs by a spreading resistance technique
|
Frank, H.
|
|
1967
|
10 |
7 |
p. 727-728
2 p.
|
artikel
|
| 10 |
On the variation of small-signal alphas of a p-n-p-n device with current
|
Yang, E.S.
|
|
1967
|
10 |
7 |
p. 641-648
8 p.
|
artikel
|
| 11 |
Optical thickness measurement of SiO2Si3N4 films on silicon
|
Reizman, F.
|
|
1967
|
10 |
7 |
p. 625-632
8 p.
|
artikel
|
| 12 |
Preparation and properties of epitaxial InAs
|
McCarthy, J.P.
|
|
1967
|
10 |
7 |
p. 649-650
2 p.
|
artikel
|
| 13 |
Stabilization of MOS devices
|
Hofstein, S.R.
|
|
1967
|
10 |
7 |
p. 657-664
8 p.
|
artikel
|
| 14 |
Transient space-charge-limited currents including diffusion
|
Schilling, R.B.
|
|
1967
|
10 |
7 |
p. 689-699
11 p.
|
artikel
|
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