| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Another method for the determination of silicon oxide thickness
|
Lukěs, F.
|
|
1967
|
10 |
3 |
p. 264-266
3 p.
|
artikel
|
| 2 |
Changes in GaAs electroluminescent diodes induced by continuous operation
|
Jacobus, W.N.
|
|
1967
|
10 |
3 |
p. 260-262
3 p.
|
artikel
|
| 3 |
Comments on “high injection theories of the p-n junction”
|
Nordman, J.E.
|
|
1967
|
10 |
3 |
p. 263-264
2 p.
|
artikel
|
| 4 |
Complex structure in the blue fluorescence of single crystals of CdS at 4.2°K
|
Yee, J.H.
|
|
1967
|
10 |
3 |
p. 257-259
3 p.
|
artikel
|
| 5 |
Effect of generation-recombination centers on the stress-dependence of Si p-n junction characteristics
|
Kressel, H.
|
|
1967
|
10 |
3 |
p. 213-224
12 p.
|
artikel
|
| 6 |
Erratum
|
|
|
1967
|
10 |
3 |
p. 272-
1 p.
|
artikel
|
| 7 |
Experimental study of the effect of junction curvature on breakdown voltage in Si
|
Speeney, D.V.
|
|
1967
|
10 |
3 |
p. 177-182
6 p.
|
artikel
|
| 8 |
Hall-effect analogues
|
Newsome, J.P.
|
|
1967
|
10 |
3 |
p. 183-191
9 p.
|
artikel
|
| 9 |
Hole-electron product of pn junctions
|
Gummel, H.K.
|
|
1967
|
10 |
3 |
p. 209-212
4 p.
|
artikel
|
| 10 |
Imperfections and active centres in semiconductors
|
Sampson, J.B.
|
|
1967
|
10 |
3 |
p. 271-272
2 p.
|
artikel
|
| 11 |
Incremental stress effects in transistors
|
Mattson, R.H.
|
|
1967
|
10 |
3 |
p. 241-251
11 p.
|
artikel
|
| 12 |
Interaction of charge carriers with high frequency phonons
|
Spector, H.N.
|
|
1967
|
10 |
3 |
p. 255-256
2 p.
|
artikel
|
| 13 |
Normalized characteristic of n-v-n devices
|
van der Ziel, A.
|
|
1967
|
10 |
3 |
p. 267-268
2 p.
|
artikel
|
| 14 |
Notice
|
|
|
1967
|
10 |
3 |
p. 272-
1 p.
|
artikel
|
| 15 |
Observation of surface phenomena on semiconductor devices by a light spot scanning method
|
Tihanyi, J.
|
|
1967
|
10 |
3 |
p. 235-239
5 p.
|
artikel
|
| 16 |
Some remarks on “high injection theories of the p-n junction in the charge neutrality approximation”
|
Házman, S.
|
|
1967
|
10 |
3 |
p. 269-271
3 p.
|
artikel
|
| 17 |
Space-charge-limited current in silicon
|
Büget, U.
|
|
1967
|
10 |
3 |
p. 199-207
9 p.
|
artikel
|
| 18 |
Theory of lateral transistors
|
Lindmayer, J.
|
|
1967
|
10 |
3 |
p. 225-234
10 p.
|
artikel
|
| 19 |
Theory of the influence of hot electron effects on insulated gate field effect transistors
|
Neumark, G.F.
|
|
1967
|
10 |
3 |
p. 169-175
7 p.
|
artikel
|
| 20 |
Thermal conductivity of silicon, germanium, III–V compounds and III–V alloys
|
Maycock, P.D.
|
|
1967
|
10 |
3 |
p. 161-168
8 p.
|
artikel
|
| 21 |
Thermal noise in space-charge-limited solid state diodes
|
Liu, S.T.
|
|
1967
|
10 |
3 |
p. 253-254
2 p.
|
artikel
|
| 22 |
Unusual electrode configuration for Hall measurements on thin films and field-effect devices
|
van Heek, H.F.
|
|
1967
|
10 |
3 |
p. 268-269
2 p.
|
artikel
|
| 23 |
Use of diamond for photo-stimulated ultraviolet radiation dosimetry
|
Miyashita, K.
|
|
1967
|
10 |
3 |
p. 193-197
5 p.
|
artikel
|
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