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Journal description
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Details for article 5 of 23 found articles
| Title: |
Effect of generation-recombination centers on the stress-dependence of Si p-n junction characteristics |
| Author: |
Kressel, H. Elsea, A. |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 10 (1967) nr. 3 pages 12 p. |
| Year: |
1967 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 5 of 23 found articles
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