| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Adhesion-free growth of AlSb bulk crystals in silica crucibles
|
Pino, R.
|
|
2006
|
290 |
1 |
p. 29-34
6 p.
|
artikel
|
| 2 |
Annealing behavior of N-bonding configurations in GaN0.023As0.977 ternary alloy grown on GaAs (001) substrate by molecular beam epitaxy
|
Liu, H.F.
|
|
2006
|
290 |
1 |
p. 24-28
5 p.
|
artikel
|
| 3 |
A simple transferable interatomic potential model for binary oxides applied to bulk α - Al 2 O 3 and the (0001) α - Al 2 O 3 surface
|
Sun, Jizhong
|
|
2006
|
290 |
1 |
p. 235-240
6 p.
|
artikel
|
| 4 |
Crystal growth and characterization of Nd, Mg co-doped near-stoichiometric LiNbO3
|
Nakamura, Masaru
|
|
2006
|
290 |
1 |
p. 144-148
5 p.
|
artikel
|
| 5 |
Direct evidence of compositional pulling effect in Al x Ga1− x N epilayers
|
Lin, H.Y.
|
|
2006
|
290 |
1 |
p. 225-228
4 p.
|
artikel
|
| 6 |
Editorial Board
|
|
|
2006
|
290 |
1 |
p. ii-
1 p.
|
artikel
|
| 7 |
Effect of carbon doping on oxygen precipitation behavior in internal gettering processing for Czochralski silicon
|
Chen, Jiahe
|
|
2006
|
290 |
1 |
p. 61-66
6 p.
|
artikel
|
| 8 |
Effect of solvent on crystallization behavior of xylitol
|
Hao, Hongxun
|
|
2006
|
290 |
1 |
p. 192-196
5 p.
|
artikel
|
| 9 |
Effects of nitrogen incorporation on the electronic properties of Ga x In1− x N y As1− y epilayers probed by persistent photoconductivity
|
Hsu, S.H.
|
|
2006
|
290 |
1 |
p. 87-90
4 p.
|
artikel
|
| 10 |
Effects of the source temperature on the formation of a metastable HgI2 phase and consequences for the nucleation and growth behaviors in PVT ampoules
|
Lin, Jun-Xian
|
|
2006
|
290 |
1 |
p. 111-114
4 p.
|
artikel
|
| 11 |
Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering
|
Wang, Peng
|
|
2006
|
290 |
1 |
p. 56-60
5 p.
|
artikel
|
| 12 |
Flux growth and characterization of SrMo0.93O3 single crystal
|
Zhao, B.C.
|
|
2006
|
290 |
1 |
p. 292-295
4 p.
|
artikel
|
| 13 |
Gallium-based catalysts for growth of GaN nanowires
|
Simpkins, B.S.
|
|
2006
|
290 |
1 |
p. 115-120
6 p.
|
artikel
|
| 14 |
Growth and characterization of CuAlSe2(112)/GaAs(100) heteroepitaxial layers grown by hot wall epitaxy method
|
You, S.H.
|
|
2006
|
290 |
1 |
p. 18-23
6 p.
|
artikel
|
| 15 |
Growth kinetics of potassium chloride II—Water–ethanol systems
|
Lopes, Ana
|
|
2006
|
290 |
1 |
p. 220-224
5 p.
|
artikel
|
| 16 |
Growth kinetics of potassium chloride—I: Pure aqueous solutions
|
Lopes, Ana
|
|
2006
|
290 |
1 |
p. 213-219
7 p.
|
artikel
|
| 17 |
Growth of epitaxial γ-Al2O3(111) films with smooth surfaces on chemically oxidized Si(111) substrates using an Al–N2O mixed source molecular beam epitaxy
|
Okada, Takayuki
|
|
2006
|
290 |
1 |
p. 91-95
5 p.
|
artikel
|
| 18 |
Growth phenomena of Si and Si/Ge nanowires on Si (111) by molecular beam epitaxy
|
Zakharov, N.D.
|
|
2006
|
290 |
1 |
p. 6-10
5 p.
|
artikel
|
| 19 |
Gypsum crystal size distribution in four continuous flow stirred slurry boric acid reactors in series compared with the batch
|
Çakal, G.Ö.
|
|
2006
|
290 |
1 |
p. 197-202
6 p.
|
artikel
|
| 20 |
Hydrothermal waves in differentially heated shallow annular pools of silicone oil
|
Shi, Wanyuan
|
|
2006
|
290 |
1 |
p. 280-291
12 p.
|
artikel
|
| 21 |
Improvement of luminescence from β-FeSi2 particles embedded in silicon, with high temperature silicon buffer layer
|
Li, Cheng
|
|
2006
|
290 |
1 |
p. 176-179
4 p.
|
artikel
|
| 22 |
Impurity-induced defect and its effect on protein crystal perfection
|
Yoshizaki, Izumi
|
|
2006
|
290 |
1 |
p. 185-191
7 p.
|
artikel
|
| 23 |
Influence of the carrier gas on the luminescence of ZnO tetrapod nanowires
|
Leung, C.Y.
|
|
2006
|
290 |
1 |
p. 131-136
6 p.
|
artikel
|
| 24 |
In situ hydrothermal synthesis of YVO4 nanorods and microtubes using (NH4)0.5V2O5 nanowires templates
|
Wu, Xingcai
|
|
2006
|
290 |
1 |
p. 207-212
6 p.
|
artikel
|
| 25 |
IOCG- Prizes
|
|
|
2006
|
290 |
1 |
p. v-vi
nvt p.
|
artikel
|
| 26 |
Large-aperture YCOB crystal growth for frequency conversion in the high average power laser system
|
Fei, Yiting
|
|
2006
|
290 |
1 |
p. 301-306
6 p.
|
artikel
|
| 27 |
Large scale tapered GaN rods grown by chemical vapour deposition
|
Qiu, Hailin
|
|
2006
|
290 |
1 |
p. 1-5
5 p.
|
artikel
|
| 28 |
MBE growth optimization of InN nanowires
|
Stoica, T.
|
|
2006
|
290 |
1 |
p. 241-247
7 p.
|
artikel
|
| 29 |
Mechanism of in-plane alignment in magnetron sputtered biaxially aligned yttria-stabilized zirconia
|
Mahieu, Stijn
|
|
2006
|
290 |
1 |
p. 272-279
8 p.
|
artikel
|
| 30 |
Microstructure and electrical properties of lanthanum nickel oxide thin films deposited by metallo-organic decomposition method
|
Wang, Zhan Jie
|
|
2006
|
290 |
1 |
p. 161-165
5 p.
|
artikel
|
| 31 |
Microstructure characterization and room temperature deformation of a rapidly solidified NiAl-based eutectic alloy containing trace Dy
|
Li, Hutian
|
|
2006
|
290 |
1 |
p. 258-265
8 p.
|
artikel
|
| 32 |
Novel yttria-stabilised zirconia–alumina tetragonal phase obtained by co-precipitation
|
Santoyo-Salazar, J.
|
|
2006
|
290 |
1 |
p. 307-312
6 p.
|
artikel
|
| 33 |
On the effects of furnace gradients on interface shape during the growth of cadmium zinc telluride in EDG furnaces
|
Lun, Lisa
|
|
2006
|
290 |
1 |
p. 35-43
9 p.
|
artikel
|
| 34 |
Optical and transport properties of chromium-doped CdSe and CdS0.67Se0.33 crystals
|
Kasiyan, V.
|
|
2006
|
290 |
1 |
p. 50-55
6 p.
|
artikel
|
| 35 |
Optimization of ( 1 1 2 ¯ 0 ) a-plane GaN growth by MOCVD on ( 1 1 ¯ 0 2 ) r-plane sapphire
|
Ni, X.
|
|
2006
|
290 |
1 |
p. 166-170
5 p.
|
artikel
|
| 36 |
Polarity- and orientation-related defect distribution in 4H-SiC single crystals
|
Rost, H.-J.
|
|
2006
|
290 |
1 |
p. 137-143
7 p.
|
artikel
|
| 37 |
Properties of (h 00)-oriented La1− x Na x MnO3 films (x=0.1, 0.15 and 0.3) prepared by chemical solution deposition method
|
Dong, Weiwei
|
|
2006
|
290 |
1 |
p. 180-184
5 p.
|
artikel
|
| 38 |
Re-determination of succinonitrile (SCN)–camphor phase diagram
|
Teng, Jing
|
|
2006
|
290 |
1 |
p. 248-257
10 p.
|
artikel
|
| 39 |
Reflection high-energy electron diffraction study of molecular beam epitaxy growth of Pr2O3 on Si(001)
|
Guo, Xiangxin
|
|
2006
|
290 |
1 |
p. 73-79
7 p.
|
artikel
|
| 40 |
Seed-layer induced growth of high-quality oriented ZnO films by a sol–gel process
|
Zhang, Can-Yun
|
|
2006
|
290 |
1 |
p. 67-72
6 p.
|
artikel
|
| 41 |
Selected synthesis of cubic and hexagonal NaYF4 crystals via a complex-assisted hydrothermal route
|
Wang, Zhijun
|
|
2006
|
290 |
1 |
p. 296-300
5 p.
|
artikel
|
| 42 |
Single-crystal growth of mercury indium telluride (MIT) by vertical Bridgman method (VB)
|
Wang, Linghang
|
|
2006
|
290 |
1 |
p. 203-206
4 p.
|
artikel
|
| 43 |
Structural and photoluminescence studies of InAsN quantum dots grown on GaAs by MBE
|
Sallet, V.
|
|
2006
|
290 |
1 |
p. 80-86
7 p.
|
artikel
|
| 44 |
Structure, electrical and optical properties of N–In codoped ZnO thin films prepared by ion-beam enhanced deposition method
|
Yuan, Ningyi
|
|
2006
|
290 |
1 |
p. 156-160
5 p.
|
artikel
|
| 45 |
Study on the electrical and optical properties of Pb(Mg1/3Nb2/3)O3–PbTiO3 thin films deposited by a chemical solution method
|
Liu, Aiyun
|
|
2006
|
290 |
1 |
p. 127-130
4 p.
|
artikel
|
| 46 |
Synthesis and characterization of spherical Sr2CeO4 phosphors by spray pyrolysis for field emission displays
|
Liu, Xiaoming
|
|
2006
|
290 |
1 |
p. 266-271
6 p.
|
artikel
|
| 47 |
Template-assisted synthesis of porous molybdenum dioxide nanofibers and nanospheres by redox etching method
|
Wang, Shutao
|
|
2006
|
290 |
1 |
p. 96-102
7 p.
|
artikel
|
| 48 |
The influence of Mg doping on the dielectric and tunable properties of (Ba0.6Sr0.4)0.925K0.075TiO3 thin films fabricated by sol–gel method
|
Sun, Xiaohua
|
|
2006
|
290 |
1 |
p. 121-126
6 p.
|
artikel
|
| 49 |
Thermal behavior and microstructure of the intermetallic compounds formed at the Sn–3Ag–0.5Cu/Cu interface after soldering and isothermal aging
|
Liu, Chih-Yao
|
|
2006
|
290 |
1 |
p. 103-110
8 p.
|
artikel
|
| 50 |
Tip-to-tip growth of aligned single-walled carbon nanotubes under an electric field
|
Chiu, Chien-Chao
|
|
2006
|
290 |
1 |
p. 171-175
5 p.
|
artikel
|
| 51 |
Transmission electron microscopy study of defect reduction in two-step lateral epitaxial overgrown nonplanar GaN substrate templates
|
Zhou, Wei
|
|
2006
|
290 |
1 |
p. 11-17
7 p.
|
artikel
|
| 52 |
Valence electron structure analysis of epitaxial growth of diamond (100) film on Si and c-BN substrate
|
Zhang, Xiao-Jun
|
|
2006
|
290 |
1 |
p. 229-234
6 p.
|
artikel
|
| 53 |
What causes rough surface in AlN crystal growth?
|
Kazan, M.
|
|
2006
|
290 |
1 |
p. 44-49
6 p.
|
artikel
|
| 54 |
X-ray topography of SrLaGaO4 single crystals
|
Malinowska, A.
|
|
2006
|
290 |
1 |
p. 149-155
7 p.
|
artikel
|
Tijdschrift beschrijving