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                             134 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A comparison of MOVPE grown strained and unstrained MQW lasers incorporating continuously graded or single composition confinement layers Carr, N.
 1992
 124 1-4 p. 723-729
7 p.
 artikel
2 AlGaAs/GaAs heterojunction bipolar transistors with C-doped base grown by AP-MOVPE Tanaka, S.
 1992
 124 1-4 p. 812-816
5 p.
 artikel
3 Alternative group V sources for growth of GaAs and AlGaAs by MOMBE (CBE) Abernathy, C.R.
 1992
 124 1-4 p. 64-69
6 p.
 artikel
4 A method for dosing solid sources for MOVPE: excellent reproducibility of dosimetry from a saturated solution of trimethylindium Frigo, Dario M.
 1992
 124 1-4 p. 99-105
7 p.
 artikel
5 Analysis of growth conditions for the deposition of monolayers of GaInAs, GaAs and InAs in InP by LP-MOVPE Seifert, W.
 1992
 124 1-4 p. 531-535
5 p.
 artikel
6 An approach to versatile highly-uniform MOVPE growth: the flow controlled stagnation point flow reactor Kondo, Makoto
 1992
 124 1-4 p. 265-271
7 p.
 artikel
7 Anisotropic photoluminescence behaviour of vertical AlGaAs structures grown on gratings Vermeire, G.
 1992
 124 1-4 p. 513-518
6 p.
 artikel
8 Application of an electrochemical arsine generator on a high throughput MOVPE reactor Burk Jr., A.A.
 1992
 124 1-4 p. 292-299
8 p.
 artikel
9 A study of Ar ion laser-assisted metalorganic molecular beam epitaxy of GaAs by reflection high-energy electron diffraction Dong, H.K.
 1992
 124 1-4 p. 181-185
5 p.
 artikel
10 Atomic layer epitaxy of CdTe on GaAs, by organometallic vapor phase epitaxy Wang, W.S.
 1992
 124 1-4 p. 670-675
6 p.
 artikel
11 Atomic scale characterization of organometallic vapor phase epitaxial growth using in-situ grazing incidence X-ray scattering Kisker, D.W.
 1992
 124 1-4 p. 1-9
9 p.
 artikel
12 Author index 1992
 124 1-4 p. 829-838
10 p.
 artikel
13 Cause and resolution of problem of erratic and decreasing trimethylindium bubbler delivery rates Fannin, L.W.
 1992
 124 1-4 p. 307-310
4 p.
 artikel
14 CBE growth of (001) GaAs: RHEED and RD studies Samuelson, L.
 1992
 124 1-4 p. 23-29
7 p.
 artikel
15 Characterization of AlGaP/GaP heterostructures grown by MOVPE Adomi, K.
 1992
 124 1-4 p. 570-575
6 p.
 artikel
16 Characterization of electrical and optical loss of MOCVD regrowth in strained layer InGaAs-GaAs quantum well heterostructure lasers Cockerill, T.M.
 1992
 124 1-4 p. 553-557
5 p.
 artikel
17 Characterization of InP to GaInAs and GaInAs to InP interfaces using tilted cleaved corner TEM Yates, M.J.
 1992
 124 1-4 p. 604-609
6 p.
 artikel
18 Characterization of interface structure in GaInAs/InP superlattices by means of X-ray diffraction Meyer, R.
 1992
 124 1-4 p. 583-588
6 p.
 artikel
19 Chemical beam epitaxy of GaAs films using single-source precursors Ekerdt, J.G.
 1992
 124 1-4 p. 158-164
7 p.
 artikel
20 Chemical beam epitaxy of GaInP on GaAs(100) substrates and its application to 0.98 μm lasers Kapre, R.M.
 1992
 124 1-4 p. 176-180
5 p.
 artikel
21 Chlorine assisted selective area epitaxy in AP-MOVPE of InP: influence of CCl4 on growth and on Zn and Si incorporation Härle, V.
 1992
 124 1-4 p. 260-264
5 p.
 artikel
22 Comparison of the As compounds tertiarybutylarsine and monoethylarsine Hövel, R.
 1992
 124 1-4 p. 129-135
7 p.
 artikel
23 Complete in situ laser monitoring of MOCVD HgCdTe/CdTe/ZnTe growth onto GaAs substrates Irvine, S.J.C.
 1992
 124 1-4 p. 654-663
10 p.
 artikel
24 Coupled gas and surface reactions in the organometallic vapor-phase epitaxy of cadmium telluride McDaniel, Anthony H.
 1992
 124 1-4 p. 676-683
8 p.
 artikel
25 Crystal orientation dependence of impurity dopant incorporation in MOVPE-grown III–V materials Kondo, Makoto
 1992
 124 1-4 p. 449-456
8 p.
 artikel
26 Current status of GaN and related compounds as wide-gap semiconductors Matsuoka, T.
 1992
 124 1-4 p. 433-438
6 p.
 artikel
27 Deposition by LP-MOVPE in the Ga-In-As-P system on differently oriented substrates Elsner, B.
 1992
 124 1-4 p. 326-332
7 p.
 artikel
28 Editorial Board 1992
 124 1-4 p. ii-
1 p.
 artikel
29 Effect of MOVPE growth parameters on the photoluminescence linewidth of ZnS x Se1− x (0⩽x⩽1) epilayers on GaAs Heuken, M.
 1992
 124 1-4 p. 633-638
6 p.
 artikel
30 Effect of substrate misorientation on the optical properties and hole concentration of Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P grown by low pressure metalorganic vapor phase epitaxy Lin, Jyh-Feng
 1992
 124 1-4 p. 415-419
5 p.
 artikel
31 Effect of surface orientation on GaInAsP material composition in MOMBE (CBE) Heinecke, H.
 1992
 124 1-4 p. 170-175
6 p.
 artikel
32 Effects of hydrogen-only interrupts on InGaAs/InP superlattices grown by OMVPE Clawson, A.R.
 1992
 124 1-4 p. 536-540
5 p.
 artikel
33 Enhancement of AsH3 decomposition on highly doped p-GaAs surfaces Kobayashi, Naoki
 1992
 124 1-4 p. 44-48
5 p.
 artikel
34 Epitaxial growth of InSb on semi-insulating GaAs by low pressure MOCVD Iwamura, Yasuo
 1992
 124 1-4 p. 371-376
6 p.
 artikel
35 Evidence for vertical superlattices grown by surface selective growth in MOMBE (CBE) Heinecke, H.
 1992
 124 1-4 p. 186-191
6 p.
 artikel
36 Fabrication of InGaAs strained quantum wires using selective MOCVD growth on SiO2-patterned GaAs substrate Nishioka, M.
 1992
 124 1-4 p. 502-506
5 p.
 artikel
37 GaInP multiwafer growth by LP-MOVPE for HBTs, lasers, LEDs or solar cells Schmitz, D.
 1992
 124 1-4 p. 278-285
8 p.
 artikel
38 Gas phase monitoring of reactions under InP MOVPE growth conditions for the decomposition of tertiarybutyl phosphine and related precursors Fan, G.H.
 1992
 124 1-4 p. 49-55
7 p.
 artikel
39 Ga1−x In xAs/InAsyP1−y/InP photodiodes for the 1.6 to 2.4 μm spectral region grown by low pressure MOCVD di Forte-Poisson, M.A.
 1992
 124 1-4 p. 782-791
10 p.
 artikel
40 Growth and characterization of InAs microclusters in InP and InAsP/InP heterostructures by low pressure MOCVD using tertiarybutylarsine Tran, C.A.
 1992
 124 1-4 p. 596-603
8 p.
 artikel
41 Growth and characterization of type-II/type-I AlGaInAs/InP interfaces Sacilotti, M.
 1992
 124 1-4 p. 589-595
7 p.
 artikel
42 Growth behavior of (C2H5)2GaCl and AsH3 based GaAs: low reactor pressure and temperatures Kuech, T.F.
 1992
 124 1-4 p. 318-325
8 p.
 artikel
43 Growth of GaSb and GaAsSb in the single phase region by MOVPE Lu, Da-cheng
 1992
 124 1-4 p. 383-388
6 p.
 artikel
44 Growth of GaSb and InSb by low-pressure plasma MOVPE Behet, M.
 1992
 124 1-4 p. 377-382
6 p.
 artikel
45 Growth of II–VI thin films from single-source precursors based on sterically encumbered sitel ligands Arnold, J.
 1992
 124 1-4 p. 647-653
7 p.
 artikel
46 Growth of InP related compounds on structured substrates for the fibrication of narrow stripe lasers Grodzinski, Piotr
 1992
 124 1-4 p. 507-512
6 p.
 artikel
47 Growth of semiconductor laser structures with integrated epitaxial Bragg reflectors on non-planar substrates Frateschi, N.C.
 1992
 124 1-4 p. 192-198
7 p.
 artikel
48 Growth of semi-insulating InGaAsP alloys using low-pressure MOCVD Knight, D.G.
 1992
 124 1-4 p. 352-357
6 p.
 artikel
49 High doping performance of lattice matched GaInP on GaAs Scheffer, F.
 1992
 124 1-4 p. 475-482
8 p.
 artikel
50 High efficiency GaAs-based multi-junction solar cells grown by metalorganic vapor phase epitaxy Chung, B.-C.
 1992
 124 1-4 p. 801-806
6 p.
 artikel
51 Highly thermally stable, high-performance InGaAsP: InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE Mircea, A.
 1992
 124 1-4 p. 737-740
4 p.
 artikel
52 High performance microcavity resonator devices grown by atmospheric pressure MOVPE Roberts, J.S.
 1992
 124 1-4 p. 792-800
9 p.
 artikel
53 High P/V ratio of GaInAs/InP resonant tunneling diode grown by OMVPE Sekiguchi, Tomonori
 1992
 124 1-4 p. 807-811
5 p.
 artikel
54 High resolution scanning transmission electron microscopy (STEM) and luminescence characterization of ZnS/ZnSe multi quantum wells (MQWs) grown by MOVPE Bollig, B.
 1992
 124 1-4 p. 639-646
8 p.
 artikel
55 Improved compositional uniformity of InGaAsP grown by low pressure metalorganic vapor phase epitaxy using tertiary butyl phosphine as the phosphorus source Zilko, J.L.
 1992
 124 1-4 p. 112-117
6 p.
 artikel
56 Improved Schottky gate characteristics for MOVPE-grown GaAs MESFETs Tischler, M.A.
 1992
 124 1-4 p. 824-828
5 p.
 artikel
57 Incorporation of zinc in MOCVD growth of Ga0.5In0.5P Kurtz, Sarah R.
 1992
 124 1-4 p. 463-469
7 p.
 artikel
58 InGaAs/GaInAsP/GaInP strained-layer quantum well separate-confinement heterostructures grown by OMVPE Groves, S.H.
 1992
 124 1-4 p. 747-750
4 p.
 artikel
59 InGaSb/GaSb photodiodes grown by MOVPE Pascal-Delannoy, F.
 1992
 124 1-4 p. 409-414
6 p.
 artikel
60 InP on patterned Si(001): defect reduction by application of the necking mechanism Krost, A.
 1992
 124 1-4 p. 207-212
6 p.
 artikel
61 In situ control of heterointerface quality in MOVPE by surface photo-absorption Kobayashi, Naoki
 1992
 124 1-4 p. 525-530
6 p.
 artikel
62 In-situ formation of As-H functions by β-elimination of specific metalorganic arsenic compounds for the MOVPE of III/V semiconductors Zimmermann, G.
 1992
 124 1-4 p. 136-141
6 p.
 artikel
63 Interface control in GaAs/GaInP superlattices grown by OMCVD Bhat, R.
 1992
 124 1-4 p. 576-582
7 p.
 artikel
64 Interface optimization of GaInAs/GaInAsP (λ = 1.3 mm) superlattices by the use of growth interruptions Streubel, K.
 1992
 124 1-4 p. 541-546
6 p.
 artikel
65 Intrinsic carbon incorporation in very high purity MOVPE GaAs Hanna, M.C.
 1992
 124 1-4 p. 443-448
6 p.
 artikel
66 Investigations on the influence of masks on the nature of selective area epitaxy Thompson, J.
 1992
 124 1-4 p. 227-234
8 p.
 artikel
67 Iron redistribution studies in adjacent acceptor-doped InP layers: application to a new SI-BH laser structure Robein, D.
 1992
 124 1-4 p. 777-781
5 p.
 artikel
68 Lattice-matched growth of InPSb on InAs by low-pressure plasma MOVPE Behet, M.
 1992
 124 1-4 p. 389-394
6 p.
 artikel
69 Long wavelength InGaAsP/InP distributed feedback lasers grown by chemical beam epitaxy Tsang, W.T.
 1992
 124 1-4 p. 716-722
7 p.
 artikel
70 Low threshold Ga x In1−x P/(Al yGa1−y)0.5In0.5P strained quantum well lasers Bour, D.P.
 1992
 124 1-4 p. 751-756
6 p.
 artikel
71 Low threshold 1.3 μm strained and lattice matched quantum well lasers Mathur, Atul
 1992
 124 1-4 p. 730-736
7 p.
 artikel
72 LP-MOVPE growth and optical characterization of GaInP/GaAs heterostructures: interfaces, quantum wells and quantum wires Guimarães, F.E.G.
 1992
 124 1-4 p. 199-206
8 p.
 artikel
73 Metalorganic chemical vapor deposition growth of Ga0.5In0.5P ordered alloys by phosphine modulation Lee, M.K.
 1992
 124 1-4 p. 358-362
5 p.
 artikel
74 Metalorganic chemical vapor deposition of YBa2Cu3O7−x using a special equipment for solid precursors Sant, C.
 1992
 124 1-4 p. 690-696
7 p.
 artikel
75 Metalorganic vapor phase epitaxy of GaAs on Si using IIa-flouride buffer layers Tiwari, A.N.
 1992
 124 1-4 p. 565-569
5 p.
 artikel
76 MOCVD growth of CuInSe2: first results Sagnes, B.
 1992
 124 1-4 p. 620-627
8 p.
 artikel
77 MOCVD methods for fabricating GaAs quantum wires and quantum dots Fukui, Takashi
 1992
 124 1-4 p. 493-496
4 p.
 artikel
78 MOCVD regrowth over GaAs/AlGaAs gratings for high power long-lived InGaAs/AlGaAs lasers York, P.K.
 1992
 124 1-4 p. 709-715
7 p.
 artikel
79 MOCVD selective growth of GaAs: C wire and dot structures by electron beam irradiation Takahashi, T.
 1992
 124 1-4 p. 213-219
7 p.
 artikel
80 MOVPE growth and characterization of InGaAs/In(GaAs)P and InGaAsP/InP/InAlAs multi-quantum-well structures for electro-optic switching devices Agrawal, N.
 1992
 124 1-4 p. 610-615
6 p.
 artikel
81 MOVPE growth of cubic GaN on GaAs using dimethylhydrazine Miyoshi, S.
 1992
 124 1-4 p. 439-442
4 p.
 artikel
82 MOVPE growth of GaAs using a N2 carrier Hardtdegen, Hilde
 1992
 124 1-4 p. 420-426
7 p.
 artikel
83 MOVPE growth of InAlGaP-based visible vertical-cavity surface-emitting lasers Schneider Jr., R.P.
 1992
 124 1-4 p. 763-771
9 p.
 artikel
84 MOVPE growth of InGaAs/InAlAs using trimethylamine alane for photonic and electronic devices Kohzen, A.
 1992
 124 1-4 p. 70-75
6 p.
 artikel
85 MOVPE growth of InGaAsP using TBA and TBP with extremely low V/III ratio Horita, M.
 1992
 124 1-4 p. 123-128
6 p.
 artikel
86 MOVPE growth of InSb on GaAs substrates Graham, R.M.
 1992
 124 1-4 p. 363-370
8 p.
 artikel
87 MOVPE growth of p-type ZnSe using dimethylaminolithium as the dopant Yanashima, K.
 1992
 124 1-4 p. 616-619
4 p.
 artikel
88 MOVPE growth of short-period superlattices of AlP-GaP and its application for light-emitting diodes Morii, A.
 1992
 124 1-4 p. 772-776
5 p.
 artikel
89 MOVPE growth of Si planar-doped AlGaAs/InGaAs pseudomorphic HEMT structures Sakaguchi, H.
 1992
 124 1-4 p. 519-524
6 p.
 artikel
90 Multiple quantum barrier structures and their application to high power visible laser diodes with strained InGaP active layers grown by MOCVD Kadoiwa, K.
 1992
 124 1-4 p. 757-762
6 p.
 artikel
91 New metalorganic gallium precursors for the growth of GaAs and AlGaAs by CBE Jones, A.C.
 1992
 124 1-4 p. 81-87
7 p.
 artikel
92 Novel selective area growth of AlGaAs and AlAs with HCl gas by MOVPE Shimoyama, K.
 1992
 124 1-4 p. 235-242
8 p.
 artikel
93 OMCVD growth of InP, InGaAs, and InGaAsP on (110) InP substrates Bhat, R.
 1992
 124 1-4 p. 311-317
7 p.
 artikel
94 OMVPE-grown (Al x Ga1−x )0.5In0.5P/InGaAs MODFET structures: growth procedure and Hall properties Bachem, K.H.
 1992
 124 1-4 p. 817-823
7 p.
 artikel
95 OMVPE growth of AlGaInP/Ga x In1−x P strained quantum well structures and their applications to visible laser diodes Katsuyama, T.
 1992
 124 1-4 p. 697-702
6 p.
 artikel
96 OMVPE growth of AlP/GaP superlattices using tertiarybutylphosphine as a phosphorus source Wakahara, Akihiro
 1992
 124 1-4 p. 118-122
5 p.
 artikel
97 Optical characterization of MOVPE grown GaInP layers Moser, M.
 1992
 124 1-4 p. 333-338
6 p.
 artikel
98 Optical monitoring of deposition and decomposition processes in MOCVD and MBE using reflectance anisotropy Armstrong, S.R.
 1992
 124 1-4 p. 37-43
7 p.
 artikel
99 Optimization of the growth by MOVPE of strained GaSb/InAs double heterojunctions and superlattices on [111] GaAs substrates Lakrimi, M.
 1992
 124 1-4 p. 395-400
6 p.
 artikel
100 Oxide ferroelectric materials grown by metalorganic chemical vapor deposition Erbil, A.
 1992
 124 1-4 p. 684-689
6 p.
 artikel
101 Photoluminescence mapping of AlGaAs/GaAs HBT layer sequences Tews, H.
 1992
 124 1-4 p. 339-345
7 p.
 artikel
102 Preface 1992
 124 1-4 p. ix-
1 p.
 artikel
103 Properties of p-on-n heterojunctions made with MCT grown by MOCVD Oguz, S.
 1992
 124 1-4 p. 664-669
6 p.
 artikel
104 Quantum well GaAs/AlGaAs diode lasers grown in a PLANET OMVPE reactor van der Poel, C.J.
 1992
 124 1-4 p. 300-306
7 p.
 artikel
105 Real-time monolayer growth oscillations detected by RD at pressures up to LP-MOVPE Jönsson, Jan
 1992
 124 1-4 p. 30-36
7 p.
 artikel
106 Reproducible growth of InAs x Sb1−x /InSb strained-layer superlattice photodiodes by low pressure MOCVD Biefeld, R.M.
 1992
 124 1-4 p. 401-408
8 p.
 artikel
107 Selective and non-planar epitaxy of InP, GaInAs and GaInAsP using low pressure MOCVD Thrush, E.J.
 1992
 124 1-4 p. 249-254
6 p.
 artikel
108 Selective and shadow masked MOVPE growth of InP/InGaAs(P) heterostructures and quantum wells Coudenys, Geert
 1992
 124 1-4 p. 497-501
5 p.
 artikel
109 Selective area growth of GaAs and AlGaAs with TMGa, TMAl, AsH3 and HCl by atmospheric pressure MOVPE Korte, L.
 1992
 124 1-4 p. 220-226
7 p.
 artikel
110 Selective area regrowth of butt-joint coupled waveguides in multi-section DBR lasers Wallin, J.
 1992
 124 1-4 p. 741-746
6 p.
 artikel
111 Selective growth of ultra-low resistance GaAs/InGaAs for high performance InGaAs FETs Hiruma, Kenji
 1992
 124 1-4 p. 255-259
5 p.
 artikel
112 Simulation of carbon doping of GaAs during MOVPE Masi, Maurizio
 1992
 124 1-4 p. 483-492
10 p.
 artikel
113 Splitting of degeneracy of valence band in strained GaAs layers observed from polarization of photoelectrons Saka, Takashi
 1992
 124 1-4 p. 346-351
6 p.
 artikel
114 Studies on the selective OMVPE of (Ga,In)/(As,P) Caneau, C.
 1992
 124 1-4 p. 243-248
6 p.
 artikel
115 Study of interrupted MOVPE growth of InGaAs/InP superlattice Jiang, X.S.
 1992
 124 1-4 p. 547-552
6 p.
 artikel
116 Subject index 1992
 124 1-4 p. 839-842
4 p.
 artikel
117 Surface reactions of dimethylaminoarsine during MOMBE of GaAs Salim, Sateria
 1992
 124 1-4 p. 16-22
7 p.
 artikel
118 Tertiarybutyldimethylantimony for InSb growth Chen, C.H.
 1992
 124 1-4 p. 142-149
8 p.
 artikel
119 The effect of GaAs surface stabilization on the properties of ZnSe grown by organometallic vapor phase epitaxy Akram, S.
 1992
 124 1-4 p. 628-632
5 p.
 artikel
120 The effect of growth temperature instability in the CBE growth of In x Ga1−x As yP1−y/InP multiple quantum well structures Chiu, T.H.
 1992
 124 1-4 p. 165-169
5 p.
 artikel
121 The effects of oxygen impurity in TMA on AlGaAs layers grown by MOVPE Hata, M.
 1992
 124 1-4 p. 427-432
6 p.
 artikel
122 The effects of substrate misorientation on silicon doping efficiency in MOVPE grown GaAs Thompson, Alan G.
 1992
 124 1-4 p. 457-462
6 p.
 artikel
123 The elimination of H2O and SiH4 in AsH3 Ikeda, Takuya
 1992
 124 1-4 p. 272-277
6 p.
 artikel
124 The growth of InSb using triisopropylantimony or tertiarybutyldimethylantimony and trimethylindium Biefeld, R.M.
 1992
 124 1-4 p. 150-157
8 p.
 artikel
125 The LP-MOVPE of GaInAs with saturated group III precursors Hövel, R.
 1992
 124 1-4 p. 106-111
6 p.
 artikel
126 The performance and reliability of 800–880 nm InAlGaAs/AlGaAs and InGaAs/AlGaAs strained layer ridge waveguide lasers Moore, A.H.
 1992
 124 1-4 p. 703-708
6 p.
 artikel
127 The pyrolysis of precursors for GaAs MOCVD studied by in-situ and ex-situ Fourier transform infrared spectroscopy Armstrong, S.R.
 1992
 124 1-4 p. 10-15
6 p.
 artikel
128 Tm doping of III–V semiconductors by MOVPE Scholz, F.
 1992
 124 1-4 p. 470-474
5 p.
 artikel
129 Triisopropylindium for OMVPE growth Chen, C.H.
 1992
 124 1-4 p. 88-92
5 p.
 artikel
130 Two-dimensional modeling of the growth of GaAs from (C2H5)2GaCl and AsH3 Hierlemann, M.P.
 1992
 124 1-4 p. 56-63
8 p.
 artikel
131 Uniform growth of InSb on GaAs in a rotating disk reactor by LP-MOVPE McKee, M.A.
 1992
 124 1-4 p. 286-291
6 p.
 artikel
132 Use of high purity trimethylindium-trimethylamine adduct in MOVPE of InP Soulière, V.
 1992
 124 1-4 p. 93-98
6 p.
 artikel
133 Vacuum chemical epitaxial growth of GaAs films using dimethylamine gallane Malocsay, E.
 1992
 124 1-4 p. 76-80
5 p.
 artikel
134 Very smooth AlGaAs-GaAs quantum wells grown by metalorganic chemical vapor deposition Dupuis, Russell D.
 1992
 124 1-4 p. 558-564
7 p.
 artikel
                             134 gevonden resultaten
 
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