| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison of Hg1−xCdxTe MOCVD films on lattice-matched (CdZn)Te and Cd(TeSe) substrates
|
Bevan, M.J.
|
|
1990
|
102 |
4 |
p. 785-792
8 p.
|
artikel
|
| 2 |
A cross-sectional tem study of MOVPE grown CdHgTe
|
Nouruzi-Khorasani, A.
|
|
1990
|
102 |
4 |
p. 819-826
8 p.
|
artikel
|
| 3 |
A study of indium depletion in the OMVPE growth of GaInAs
|
Agnello, Paul D.
|
|
1990
|
102 |
4 |
p. 775-784
10 p.
|
artikel
|
| 4 |
Atomic layer molecular beam epitaxy of InAs/A1As heterostructures
|
Vasquez, M.
|
|
1990
|
102 |
4 |
p. 891-898
8 p.
|
artikel
|
| 5 |
Author index
|
|
|
1990
|
102 |
4 |
p. 1075-1081
7 p.
|
artikel
|
| 6 |
Axial dislocations in LEC-grown In-doped GaAs crystals
|
Ono, Haruhiko
|
|
1990
|
102 |
4 |
p. 949-956
8 p.
|
artikel
|
| 7 |
Calculation of interfacial tensions
|
Mersmann, A.
|
|
1990
|
102 |
4 |
p. 841-847
7 p.
|
artikel
|
| 8 |
Characterization of large YBa2Cu3O7-x single crystals by neutron diffraction
|
Sonntag, R.
|
|
1990
|
102 |
4 |
p. 957-964
8 p.
|
artikel
|
| 9 |
Codeposition of aluminum oxide and silicon oxide on a single crystal tungsten surface
|
Draeger, Norman A.
|
|
1990
|
102 |
4 |
p. 908-914
7 p.
|
artikel
|
| 10 |
Contact nuclei formation in aqueous dextrose solutions
|
Cerreta, Michael K.
|
|
1990
|
102 |
4 |
p. 869-876
8 p.
|
artikel
|
| 11 |
Crystallization of n-dotriacontane from hydrocarbon solution with polymeric additives
|
Beiny, D.H.M.
|
|
1990
|
102 |
4 |
p. 801-806
6 p.
|
artikel
|
| 12 |
Dendrite relay crystallization of the dispersed melt
|
Melikhov, I.V.
|
|
1990
|
102 |
4 |
p. 885-890
6 p.
|
artikel
|
| 13 |
Directional solidification of a planar interface in the presence of a time-dependent electric current
|
Brush, L.N.
|
|
1990
|
102 |
4 |
p. 725-742
18 p.
|
artikel
|
| 14 |
Dissolution morphology and kinetics of (101) ADP face; Mild etching of possible surface defects
|
Vekilov, P.G.
|
|
1990
|
102 |
4 |
p. 706-716
11 p.
|
artikel
|
| 15 |
Effect of process changes on the properties of CdxHg1−xTe crystals grown by Bridgman using ACRT
|
Capper, P.
|
|
1990
|
102 |
4 |
p. 848-856
9 p.
|
artikel
|
| 16 |
Effect of vibrational stirring on the quality of Bridgman-grown CdTe
|
Lu, Y.-C.
|
|
1990
|
102 |
4 |
p. 807-813
7 p.
|
artikel
|
| 17 |
Etch figures of berlinite by HF, NH4HF2, H3PO4 and NaOH solutions
|
Yoshimura, J.
|
|
1990
|
102 |
4 |
p. 1035-1042
8 p.
|
artikel
|
| 18 |
Flux growth of melilite single crystals
|
Oesten, R.
|
|
1990
|
102 |
4 |
p. 919-924
6 p.
|
artikel
|
| 19 |
Four test problems for the numerical simulation of flow in Czochralski crystal growth
|
Wheeler, A.A.
|
|
1990
|
102 |
4 |
p. 691-695
5 p.
|
artikel
|
| 20 |
Growth of boron whiskers and ribbons in a low-pressure B2H6 + He + H2 plasma
|
Komatsu, Shojiro
|
|
1990
|
102 |
4 |
p. 899-907
9 p.
|
artikel
|
| 21 |
Growth of CuZnAl and CuAlNi single crystals with shape memory martensites
|
Roy, S.N.
|
|
1990
|
102 |
4 |
p. 1061-1064
4 p.
|
artikel
|
| 22 |
Growth of large size urea crystals
|
Bingrong, Huang
|
|
1990
|
102 |
4 |
p. 762-764
3 p.
|
artikel
|
| 23 |
Growth of large tetrapod-like ZnO crystals
|
Kitano, Motoi
|
|
1990
|
102 |
4 |
p. 965-973
9 p.
|
artikel
|
| 24 |
High purity GaAs and AlxGa1-xAs grown by metalorganic molecular beam epitaxy
|
Furuhata, Naoki
|
|
1990
|
102 |
4 |
p. 814-818
5 p.
|
artikel
|
| 25 |
High quality Si-InP bulk crystal growth by horizontal gradient freeze method under controlled phosphorus vapor pressure
|
Yoshida, S.
|
|
1990
|
102 |
4 |
p. 696-700
5 p.
|
artikel
|
| 26 |
Influence of In-Doping on dislocations in Liquid Encapsulated Czochralski (LEC) grown gallium arsenide
|
Wu, J.
|
|
1990
|
102 |
4 |
p. 701-705
5 p.
|
artikel
|
| 27 |
Influence of the BaF2 substrate preparation on the structural perfection of epitaxially grown IV–VI compounds
|
Clemens, H.
|
|
1990
|
102 |
4 |
p. 933-938
6 p.
|
artikel
|
| 28 |
Instructions to authors
|
|
|
1990
|
102 |
4 |
p. 1086-
1 p.
|
artikel
|
| 29 |
Interaction between growing crystals and inclusions in the melt
|
Fedorov, O.P.
|
|
1990
|
102 |
4 |
p. 857-861
5 p.
|
artikel
|
| 30 |
Lattice-constant-adaptable crystallographics
|
Mateika, D.
|
|
1990
|
102 |
4 |
p. 994-1013
20 p.
|
artikel
|
| 31 |
Lattice-constant-adaptable crystallographics
|
Haisma, Jan
|
|
1990
|
102 |
4 |
p. 979-993
15 p.
|
artikel
|
| 32 |
Lattice-constant-adaptable crystallographics
|
Haisma, Jan
|
|
1990
|
102 |
4 |
p. 1014-1034
21 p.
|
artikel
|
| 33 |
Nd3+: KY(WO4)2 crystal growth and X-ray diffraction
|
Wang, Guofu
|
|
1990
|
102 |
4 |
p. 765-768
4 p.
|
artikel
|
| 34 |
News, reports and announcements
|
|
|
1990
|
102 |
4 |
p. 1074-
1 p.
|
artikel
|
| 35 |
Numerical description of the phase diagram of the Hg-Cd-Te system in the Te-rich corner
|
Sanz-Maudes, J.
|
|
1990
|
102 |
4 |
p. 1065-1068
4 p.
|
artikel
|
| 36 |
Quasi-quantitative estimation of solidus curve on As-rich side of Ga-As system
|
Inada, Tomoki
|
|
1990
|
102 |
4 |
p. 915-918
4 p.
|
artikel
|
| 37 |
Secondary nucleation induced by the cracking of a growing crystal: KH2PO4 (KDP) and K(H,D)2PO4 (DKDP)
|
Chernov, A.A.
|
|
1990
|
102 |
4 |
p. 793-800
8 p.
|
artikel
|
| 38 |
Single crystal growth of Pb2YBa2Cu3O8 and YBa2Cu3O7-x from PbO-B2O3 melts
|
Hibiya, Taketoshi
|
|
1990
|
102 |
4 |
p. 862-868
7 p.
|
artikel
|
| 39 |
Spatially-resolved photoluminescence study of InP: Fe substrates from different suppliers
|
Bruines, J.J.P.
|
|
1990
|
102 |
4 |
p. 769-774
6 p.
|
artikel
|
| 40 |
Subject index
|
|
|
1990
|
102 |
4 |
p. 1082-1085
4 p.
|
artikel
|
| 41 |
Surface damage of CdTe by mechanical polishing investigated by cross-sectional TEM
|
Nouruzi-Khorasani, A.
|
|
1990
|
102 |
4 |
p. 1069-1073
5 p.
|
artikel
|
| 42 |
Surface migration and reaction mechanism during selective growth of GaAs and AlAs by metalorganic chemical vapor deposition
|
Hiruma, Kenji
|
|
1990
|
102 |
4 |
p. 717-724
8 p.
|
artikel
|
| 43 |
Tem investigation of Ga and in doped ZnS, and in doped ZnSe
|
Loginov, Y.Y.
|
|
1990
|
102 |
4 |
p. 827-840
14 p.
|
artikel
|
| 44 |
The effect of the oxygen pressure on the growth of single crystals of YBa2Cu3O7-x and Y0.8Ba1.2Cu0.15Pt0.9O6
|
Gouzerh, P.
|
|
1990
|
102 |
4 |
p. 1059-1060
2 p.
|
artikel
|
| 45 |
Thermocapillary flow and melt/solid interfaces in floating-zone crystal growth under microgravity
|
Lan, C.W.
|
|
1990
|
102 |
4 |
p. 1043-1058
16 p.
|
artikel
|
| 46 |
Thermophoresis of solid particles in horizontal chemical vapor deposition reactors
|
Fotiadis, Dimitrios I.
|
|
1990
|
102 |
4 |
p. 743-761
19 p.
|
artikel
|
| 47 |
The use of superlattices as internal standards for composition and thickness measurements in modulation-doped quantum well structures
|
Auvray, P.
|
|
1990
|
102 |
4 |
p. 939-948
10 p.
|
artikel
|
| 48 |
Vacuum stability of epitaxial NiGa and Ni2Ga3 layers MBE grown onto a GaAs substrate
|
Guenais, B.
|
|
1990
|
102 |
4 |
p. 925-932
8 p.
|
artikel
|
| 49 |
Vertical seeded melt growth of GaAs
|
Bourret, E.D.
|
|
1990
|
102 |
4 |
p. 877-884
8 p.
|
artikel
|
| 50 |
Zinc doping in InP grown by atmospheric pressure metalorganic vapor phase epitaxy
|
Molassioti, A.
|
|
1990
|
102 |
4 |
p. 974-978
5 p.
|
artikel
|
Tijdschrift beschrijving