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                             50 results found
no title author magazine year volume issue page(s) type
1 A comparison of Hg1−xCdxTe MOCVD films on lattice-matched (CdZn)Te and Cd(TeSe) substrates Bevan, M.J.
 1990
 102 4 p. 785-792
8 p.
 article
2 A cross-sectional tem study of MOVPE grown CdHgTe Nouruzi-Khorasani, A.
 1990
 102 4 p. 819-826
8 p.
 article
3 A study of indium depletion in the OMVPE growth of GaInAs Agnello, Paul D.
 1990
 102 4 p. 775-784
10 p.
 article
4 Atomic layer molecular beam epitaxy of InAs/A1As heterostructures Vasquez, M.
 1990
 102 4 p. 891-898
8 p.
 article
5 Author index 1990
 102 4 p. 1075-1081
7 p.
 article
6 Axial dislocations in LEC-grown In-doped GaAs crystals Ono, Haruhiko
 1990
 102 4 p. 949-956
8 p.
 article
7 Calculation of interfacial tensions Mersmann, A.
 1990
 102 4 p. 841-847
7 p.
 article
8 Characterization of large YBa2Cu3O7-x single crystals by neutron diffraction Sonntag, R.
 1990
 102 4 p. 957-964
8 p.
 article
9 Codeposition of aluminum oxide and silicon oxide on a single crystal tungsten surface Draeger, Norman A.
 1990
 102 4 p. 908-914
7 p.
 article
10 Contact nuclei formation in aqueous dextrose solutions Cerreta, Michael K.
 1990
 102 4 p. 869-876
8 p.
 article
11 Crystallization of n-dotriacontane from hydrocarbon solution with polymeric additives Beiny, D.H.M.
 1990
 102 4 p. 801-806
6 p.
 article
12 Dendrite relay crystallization of the dispersed melt Melikhov, I.V.
 1990
 102 4 p. 885-890
6 p.
 article
13 Directional solidification of a planar interface in the presence of a time-dependent electric current Brush, L.N.
 1990
 102 4 p. 725-742
18 p.
 article
14 Dissolution morphology and kinetics of (101) ADP face; Mild etching of possible surface defects Vekilov, P.G.
 1990
 102 4 p. 706-716
11 p.
 article
15 Effect of process changes on the properties of CdxHg1−xTe crystals grown by Bridgman using ACRT Capper, P.
 1990
 102 4 p. 848-856
9 p.
 article
16 Effect of vibrational stirring on the quality of Bridgman-grown CdTe Lu, Y.-C.
 1990
 102 4 p. 807-813
7 p.
 article
17 Etch figures of berlinite by HF, NH4HF2, H3PO4 and NaOH solutions Yoshimura, J.
 1990
 102 4 p. 1035-1042
8 p.
 article
18 Flux growth of melilite single crystals Oesten, R.
 1990
 102 4 p. 919-924
6 p.
 article
19 Four test problems for the numerical simulation of flow in Czochralski crystal growth Wheeler, A.A.
 1990
 102 4 p. 691-695
5 p.
 article
20 Growth of boron whiskers and ribbons in a low-pressure B2H6 + He + H2 plasma Komatsu, Shojiro
 1990
 102 4 p. 899-907
9 p.
 article
21 Growth of CuZnAl and CuAlNi single crystals with shape memory martensites Roy, S.N.
 1990
 102 4 p. 1061-1064
4 p.
 article
22 Growth of large size urea crystals Bingrong, Huang
 1990
 102 4 p. 762-764
3 p.
 article
23 Growth of large tetrapod-like ZnO crystals Kitano, Motoi
 1990
 102 4 p. 965-973
9 p.
 article
24 High purity GaAs and AlxGa1-xAs grown by metalorganic molecular beam epitaxy Furuhata, Naoki
 1990
 102 4 p. 814-818
5 p.
 article
25 High quality Si-InP bulk crystal growth by horizontal gradient freeze method under controlled phosphorus vapor pressure Yoshida, S.
 1990
 102 4 p. 696-700
5 p.
 article
26 Influence of In-Doping on dislocations in Liquid Encapsulated Czochralski (LEC) grown gallium arsenide Wu, J.
 1990
 102 4 p. 701-705
5 p.
 article
27 Influence of the BaF2 substrate preparation on the structural perfection of epitaxially grown IV–VI compounds Clemens, H.
 1990
 102 4 p. 933-938
6 p.
 article
28 Instructions to authors 1990
 102 4 p. 1086-
1 p.
 article
29 Interaction between growing crystals and inclusions in the melt Fedorov, O.P.
 1990
 102 4 p. 857-861
5 p.
 article
30 Lattice-constant-adaptable crystallographics Mateika, D.
 1990
 102 4 p. 994-1013
20 p.
 article
31 Lattice-constant-adaptable crystallographics Haisma, Jan
 1990
 102 4 p. 979-993
15 p.
 article
32 Lattice-constant-adaptable crystallographics Haisma, Jan
 1990
 102 4 p. 1014-1034
21 p.
 article
33 Nd3+: KY(WO4)2 crystal growth and X-ray diffraction Wang, Guofu
 1990
 102 4 p. 765-768
4 p.
 article
34 News, reports and announcements 1990
 102 4 p. 1074-
1 p.
 article
35 Numerical description of the phase diagram of the Hg-Cd-Te system in the Te-rich corner Sanz-Maudes, J.
 1990
 102 4 p. 1065-1068
4 p.
 article
36 Quasi-quantitative estimation of solidus curve on As-rich side of Ga-As system Inada, Tomoki
 1990
 102 4 p. 915-918
4 p.
 article
37 Secondary nucleation induced by the cracking of a growing crystal: KH2PO4 (KDP) and K(H,D)2PO4 (DKDP) Chernov, A.A.
 1990
 102 4 p. 793-800
8 p.
 article
38 Single crystal growth of Pb2YBa2Cu3O8 and YBa2Cu3O7-x from PbO-B2O3 melts Hibiya, Taketoshi
 1990
 102 4 p. 862-868
7 p.
 article
39 Spatially-resolved photoluminescence study of InP: Fe substrates from different suppliers Bruines, J.J.P.
 1990
 102 4 p. 769-774
6 p.
 article
40 Subject index 1990
 102 4 p. 1082-1085
4 p.
 article
41 Surface damage of CdTe by mechanical polishing investigated by cross-sectional TEM Nouruzi-Khorasani, A.
 1990
 102 4 p. 1069-1073
5 p.
 article
42 Surface migration and reaction mechanism during selective growth of GaAs and AlAs by metalorganic chemical vapor deposition Hiruma, Kenji
 1990
 102 4 p. 717-724
8 p.
 article
43 Tem investigation of Ga and in doped ZnS, and in doped ZnSe Loginov, Y.Y.
 1990
 102 4 p. 827-840
14 p.
 article
44 The effect of the oxygen pressure on the growth of single crystals of YBa2Cu3O7-x and Y0.8Ba1.2Cu0.15Pt0.9O6 Gouzerh, P.
 1990
 102 4 p. 1059-1060
2 p.
 article
45 Thermocapillary flow and melt/solid interfaces in floating-zone crystal growth under microgravity Lan, C.W.
 1990
 102 4 p. 1043-1058
16 p.
 article
46 Thermophoresis of solid particles in horizontal chemical vapor deposition reactors Fotiadis, Dimitrios I.
 1990
 102 4 p. 743-761
19 p.
 article
47 The use of superlattices as internal standards for composition and thickness measurements in modulation-doped quantum well structures Auvray, P.
 1990
 102 4 p. 939-948
10 p.
 article
48 Vacuum stability of epitaxial NiGa and Ni2Ga3 layers MBE grown onto a GaAs substrate Guenais, B.
 1990
 102 4 p. 925-932
8 p.
 article
49 Vertical seeded melt growth of GaAs Bourret, E.D.
 1990
 102 4 p. 877-884
8 p.
 article
50 Zinc doping in InP grown by atmospheric pressure metalorganic vapor phase epitaxy Molassioti, A.
 1990
 102 4 p. 974-978
5 p.
 article
                             50 results found
 
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