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Details for article 249 of 252 found articles
| Title: |
Tungsten Nitrides by PECVD: Some Chemical and Structural Characterizations |
| Author: |
Meunier, C. Berjoan, R. Savall, C. Weber, J. |
| Appeared in: |
Materials and manufacturing processes |
| Paging: | Volume 13 (1998) nr. 3 pages 415-422 |
| Year: |
1998-05-01 |
| Contents: |
Thin films of c-WN: H are synthesized by plasma enhanced chemical vapor deposition using a hot wall type reactor. These films are polycrystalline. The formation temperatures are in the 350-620°C range with WF6, NH3, as precursors and Ar and H2 as feed gas. XRD and XPS analysis show a chemical composition close to that of WN but a structure varying from tungsten form to tungsten nitride. ERDA and RBS analysis provide a hydrogen content and its; concentration profile through the thickness of the coating. AFM measurements are performed to evaluate the growth conditions. |
| Publisher: |
Taylor & Francis |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 249 of 252 found articles
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