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| Titel: |
Analysis of electric field distributions in ultra-shallow silicon junctions under thermodynamic equilibrium conditions |
| Auteur: |
Silard, Andrei P. |
| Verschenen in: |
International journal of electronics |
| Paginering: | Jaargang 63 (1987) nr. 4 pagina's 587-600 |
| Jaar: |
1987 |
| Inhoud: |
A comprehensive analysis of electric field distributions in ultra-shallow, heavilydoped, strongly-asymmetric silicon n-p junctions is performed under thermodynamic equilibrium conditions. The physical deficiences of previous approaches to the built-in electric field computations in such very steep junctions are examined on the grounds of semiconductor fundamentals. It is shown that in the surface-controlled region of ultra-shallow silicon junctions the built-in field E calculations depart from the bulk-type computations precisely in view of the peculiar physical features of the semiconductor surface (discontinuities of impurities, surface states, etc.). The basic theoretical contention of this paper is that: (a) the electric field strength E should necessarily go to zero at a 'free' (air or vacuum) surface of such junctions, and (b) if the projected built-in field nears the surface on the heavily-doped side of an ultra-shallow junction, then it is compulsory to take into account the interaction between E and the prevailing surface charges. The results of this work suggest that all processes in the surface-controlled region of the heavily-doped layer in ultra-shallow silicon junctions are being shaped by the peculiar interplay of the bulk field E created by the impurity gradients with the field Esurf originated in the surface states. Based upon the presented physical background, a computational model for built-in field distribution is detailed in this work. Several important implications of presented results and raised issues are also outlined in this work. |
| Uitgever: |
Taylor & Francis |
| Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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