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Details for article 14 of 38 found articles
| Title: |
Ferroelectric Bi4-x Smx Ti3 O12 Thin Films Fabricated by Pulsed Laser Deposition for Nv-RAM Applications |
| Author: |
Hu, X. B. Garg, A. Wang, J. Barber, Z. H. |
| Appeared in: |
Integrated ferroelectrics |
| Paging: | Volume 61 (2004) nr. 1 pages 123-127 |
| Year: |
2004 |
| Contents: |
Ferroelectric Bi4-xSmxTi3O12 (BSmT) thin films have been fabricated on Pt/TiOx/SiO2/Si substrates by pulsed laser deposition (PLD) and their ferroelectric properties have been characterised. The remanent polarisation (2Pr) was 17.5 μ C/cm2, 41.8 μ C/cm2, 9.3 μ C/cm2, for x = 0.55, 0.70, and 1.00, respectively, at an applied maximum field of 450 kV/cm. The polarisation of the BSmT (x = 0.70) film decreased to 86% of the initial value after 5.0× 108 switching cycles. |
| Publisher: |
Taylor & Francis |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 14 of 38 found articles
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