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Details for article 3 of 23 found articles
| Title: |
Electrical properties of paraelectric PLT(28) thin films deposited by dc magnetron sputtering |
| Author: |
Kim, H. H. Park, D. H. Lim, K. J. |
| Appeared in: |
Integrated ferroelectrics |
| Paging: | Volume 12 (1996) nr. 2-4 pages 241-249 |
| Year: |
1996-10-01 |
| Contents: |
Paraelectric [Pb, La]TiO3 (PLT, La = 28 mol%) thin films were prepared by dc magnetron sputtering using a multi-element metal target. In order to crystallize the as-deposited PLT thin films into the cubic perovskite structure, a heat treatment was applied at annealing temperatures ranging between 450 and 750°C. The electrical measurements such as dielectric properties, polarization-electric field (P-E), and current-voltage (I-V) were investigated with the change of annealing temperature. The dielectric constant and dissipation factor of paraelectric PLT film annealed at 750°C were 1216 and 0.018, respectively. The charge storage density was approximately 12.5 μC/cm2. The leakage current density in PLT film annealed at 650°C was around 0.1 μA/cm2 at the electric field of 0.25 MV/cm. |
| Publisher: |
Taylor & Francis |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 23 found articles
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