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| Titel: |
POTENTIOSTATIC TESTING OF THIN SILICON NITRIDE FILMS |
| Auteur: |
Ulrich, R. Zhao, G. Brown, W. |
| Verschenen in: |
Chemical engineering communications |
| Paginering: | Jaargang 137 (1995) nr. 1 pagina's 23-32 |
| Jaar: |
1995 |
| Inhoud: |
Micron-thick silicon nitride can be plasma-deposited as a conformal coating over complex geometries in microelectronic assemblies. The resulting films are dense and chemically inert, providing an effective diffusion barrier against chemical attack as long as the films remain mechanically intact. Potentiostatic methods have been developed to evaluate the effectiveness of these films over 3-dimensional microelectronic structures. Coated test structures were made the anode in NaCl solution and the resulting anodic dissolution of underlying metal was found to be a sensitive indicator of cracks or pinholes in these films and is similar to the corrosion reactions that pose reliability problems in field usage. This method was used to rank the film's ability to protect flat metalized silicon, stitch bonds, and Al bondwires from chemical attack. The same electrochemical method was used in conjunction with a four-point bending method to detect the onset of microcracking during measurements of the film's net ultimate strain. |
| Uitgever: |
Taylor & Francis |
| Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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