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Strain relaxation in InGaN/GaN epilayers by formation of V-pit defects studied by SEM, XRD and numerical simulations |
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Titel: |
Strain relaxation in InGaN/GaN epilayers by formation of V-pit defects studied by SEM, XRD and numerical simulations |
Auteur: |
Stránská Matějová, Jana Horák, Lukáš Minárik, Peter Holý, Václav Grzanka, Ewa Domagała, Jaroslaw Leszczyński, Michal |
Verschenen in: |
Journal of applied crystallography |
Paginering: |
Jaargang 54 () nr. 1 pagina's 62-71 |
Jaar: |
2021-02-01 |
Inhoud: |
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Uitgever: |
International Union of Crystallography, 5 Abbey Square, Chester, Cheshire CH1 2HU, England |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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