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                                       Details for article 12 of 35 found articles
 
 
  Influence of Argon Gas Flow Rate on Oxygen and Carbon Impurities Concentration in Multicrystalline Silicon Grown by Directional Solidification Furnace: Numerical and Experimental Investigation
 
 
Title: Influence of Argon Gas Flow Rate on Oxygen and Carbon Impurities Concentration in Multicrystalline Silicon Grown by Directional Solidification Furnace: Numerical and Experimental Investigation
Author: Sugunraj, S.
Aravindan, G.
Srinivasan, M.
Ramasamy, P.
Appeared in: SILICON
Paging: Volume 15 () nr. 4 pages 1701-1724
Year: 2022-09-27
Contents:
Publisher: Springer Netherlands, Dordrecht
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 12 of 35 found articles
 
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